The temperature dependent characteristics on the properties of SiC Schottky Diode has beeninvestigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottkydiode were measured in the range of 300 ∼ 500 K. Divided into pre- and post- irradiated device wasmeasured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, thebarrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier heightafter irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottkydiode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottkydiode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzedthe effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was 3.1×1010n/cm2. The current density after irradiation decreased from 12.7 to 0.75 A/cm2. Also, a slight positive shift (ΔVth= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (ΔΦB= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to 450℃. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569∼0.631 eV and work function of 4.699∼4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K∼775 K have been studied and some fundamental simulations have also been performed.