We fabricated BiAlO thin film by a solution process with a brush coating to be used as liquid crystal (LC) alignment layer. Solution-processed BiAlO was coated on the glass substrate by brush process. Prepared thin films were annealed at different temperatures of 80℃, 180℃, and 280℃. To verify whether the BiAlO film was formed properly, X-ray photoelectron spectroscopy analysis was performed on Bi and Al. Using a crystal rotation method by polarized optical microscopy, LC alignment state was evaluated. At the annealing temperature of 280℃, the uniform homogenous LC alignment was achieved. To reveal the mechanism of LC alignment by brush coating, field emission scanning electron microscope was used. Through this analysis, spin-coated and brush coated film surface were compared. It was revealed that physical anisotropy was induced by brush coating at a high annealing temperature. Particles were aligned in one direction along which brush coating was made, resulting in a physical anisotropy that affects a uniform LC alignment. Therefore, it was confirmed that brush coating combined with BiAlO thin film annealed at high temperature has a significant potential for LC alignment.

ZnO nanorods were grown on SiO2 coated Si wafers and glass by the hydrothermal method. The structural and optical properties variation of ZnO nanorods as a function of growing time was studied. ～10 nm-thick ZnO thin films deposited on substrates by rf magnetron sputtering were employed as seed layers. Zinc nitrate hexahydrate (0.05 M) and hexamethylenetetramine (0.05 M) mixed in DI water were used as a reaction solution. ZnO nanorods were respectively grown for 30 min, 1 h, 2 h, 3 h, and 4 h by maintaining the reactor at 90℃. Crystallinity of ZnO nanorods was analyzed by X-ray diffraction, and the morphology of nanorods was observed by a field emission scanning electron microscope. Transmittance and absorbance were measured by a UV-Vis spectrophotometer, and energy band gap and urbach energy were obtained from the data. Photoluminescence measurements were carried out using Nd-Yag laser (266 nm).

This research measured the dielectric properties of silicone rubber with various hardness in 100 Hz∼3 MHz, 30∼170℃ conditions. When the hardness increases from 65 degree to 75 degree, the dielectric loss increased within frequency range of 100 kHz～3 MHz and was a little change in dielectric loss within temperature range of 90℃～170℃. Thermogravimetric Analysis (TGA) showed the weight change rate increased a little while heated until 800℃. Scanning Electron Microscope (SEM) measurement showed that Aluminium Trihydroxide(AlOH3) which acts as a reinforcement agent reduced the size of the particles as the hardness increased.