There is an increasing demand for freeform stretchable display technologies capable of overcoming spatial limitations in next-generation platforms such as augmented reality (AR) and virtual reality (VR). To realize such stretchable displays, all constituent materials—including semiconductors, electrodes, insulators, and substrates—must exhibit sufficient mechanical elasticity. To date, stretchable gate insulators have primarily relied on organic polymers such as poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA). However, their practical application is significantly limited by poor electrical properties, including low dielectric constant and instability. In this work, we propose a novel gate insulator structure that minimizes the use of solution-based processes, which often suffer from poor uniformity and may damage underlying layers during fabrication. The proposed structure integrates the advantages of both organic and inorganic materials by employing a hybrid configuration. Specifically, high-k HfO₂ thin films are deposited on both the top and bottom of an organic layer composed of PVP-co-PMMA, poly(melamine-co-formaldehyde) (PMF) as a crosslinking agent, and propylene glycol monomethyl ether acetate (PGMEA) as a solvent. This inorganic–organic–inorganic structure effectively compensates for the inherent electrical limitations of organic materials. As a result, the fabricated thin-film transistors (TFTs) exhibit improved electrical performance and reliability compared to devices employing a single organic gate insulator.

Lead-free bismuth sodium titanate (BNT)-based ceramics have attracted strong attention as environmentally benign dielectric materials for high-efficiency electrostatic energy-storage capacitors. A key challenge is that pristine BNT typically exhibits large hysteresis, high remnant polarization, and limited dielectric reliability, which restrict recoverable energy storage and efficiency under practical electric fields. Here, we present a focused mini-review of recent studies to clarify how composition design, phase boundary tuning, defect chemistry, and microstructural control collectively enable slim or pinched polarization-electric field (P-E) behavior and improved energy-storage functionality in BNT-related bulk ceramics. The reviewed outcomes consistently show that stabilizing relaxor states governed by polar nanoregions (PNRs), often via solid-solution engineering and secondary relaxor/antiferroelectric-like incorporation, suppresses irreversible switching and reduces hysteresis loss, while densification and grain-size control enhance electrical homogeneity and breakdown strength. In addition, defect-mediated tuning of oxygen vacancy-related complexes is highlighted as an independent lever to control relaxor ergodicity and polarization reversibility, providing a complementary route to slim-loop optimization. These insights are expected to guide integrated design strategies that couple phase/relaxor-state engineering with defect and microstructure optimization, accelerating the development of reliable, temperature-robust, lead-free dielectric capacitors based on BNT-related ceramics.

Long lifetime, low power consumption, and environmental friendliness have enabled light-emitting diode (LED) lighting to rapidly replace conventional light sources such as incandescent and fluorescent lamps. In particular, AC-LED lighting systems can be directly powered by commercial alternating current (AC) sources; however, they suffer from significant luminance deviation caused by uneven current distribution among LED light-emitting modules. This paper proposes a lighting control method that improves flicker performance while maintaining lamp brightness and effectively reduces luminance deviation in AC-LED lighting. The proposed method reduces luminance deviation by controlling the lighting order of multiple LED light-emitting modules. Among four LED modules, only the required number of modules is continuously turned on, and the lighting priority alternates between rectification cycles. Specifically, during odd rectification cycles, LED modules are activated sequentially in ascending order (11→12→13→14), whereas during even rectification cycles, they are activated in descending order (14→13→12→11). By alternately applying continuous lighting control with opposite activation orders, the proposed reverse alternating lighting control method equalizes the current distribution among LED modules. As a result, luminance uniformity is improved, electrical stress concentration on specific modules is reduced, and the operational lifetime of the LED modules is extended compared with the conventional fixed-sequence lighting control method.

Neuromorphic computing, which mimics the energy-efficient parallel processing capabilities of the human brain, has emerged as an alternative to traditional von Neumann architectures that struggle with high power consumption in the era of artificial intelligence (AI). Despite the potential of Si-based neuromorphic chips, they often face fundamental limitations in integration density and biological compatibility, necessitating the development of next-generation devices that can better emulate the ionic signaling of biological systems. This review provides a comprehensive analysis of the recent research trends in artificial synapses and neurons based on organic electrochemical transistors (OECTs), highlighting their unique ability to achieve high transconductance and mixed ionic-electronic conduction at ultra-low operating voltages. We discuss how OECTs successfully replicate diverse synaptic plasticities and complex neuronal spiking behaviors through advanced material engineering and structural optimizations such as vertical architectures. Furthermore, this review discusses the implementation of high-order neural functions, including associative learning and logic operations, which are facilitated by the inherent electrochemical dynamics of organic semiconductors. Finally, overcoming current challenges in reliability and scalability will establish OECTs as a pivotal platform for low-power neuromorphic hardware and bio-integrated electronics.

The rapid proliferation of artificial intelligence (AI) servers and high-performance computing systems has significantly elevated the technical and reliability requirements for multilayer ceramic capacitors (MLCCs). In such systems, MLCCs are critical passive components that must deliver high capacitance, fast transient response, and robust insulation performance under high temperature, voltage, and current density. This review examines the material, structural, and process innovations that underpin MLCC performance in AI applications. Key topics include the development of ultrathin dielectric layers (<0.5 μm), rare-earth doped BaTiO₃-based dielectrics with enhanced DC bias stability, and core-shell microstructures designed for temperature and field resilience. The paper also explores insulation degradation mechanisms―such as vacancydriven conduction and demixing―and advanced reliability assessment methodologies, including HALT, TSDC, and the tipping point framework. Comparisons with automotive-grade MLCCs highlight the unique requirements of AI systems, such as ultraminiaturization, high volumetric efficiency, and ppm-level field failure rates. Finally, the review discusses emerging trends in MLCC technology, including particle engineering, interface stabilization, and advanced lamination techniques, and provides insight into the future direction of capacitor development tailored to AI data center environments.

The growing demand for thinner, lighter, and more energy-efficient electronic systems has driven the development of acoustic technologies toward compact and flexible sound generation platforms. Despite significant progress, conventional electromagnetic speakers remain limited by bulky structures, energy losses, and poor compatibility with modern ultrathin devices. In this review, recent advancements in piezoelectric acoustic systems are presented, demonstrating a new generation of speakers capable of producing high-fidelity sound from ultra-slim, lightweight, and mechanically compliant designs. Through refined structural configurations and efficient electromechanical coupling, these piezoelectric exciters achieve strong acoustic output, fast response, and wide frequency operation while drastically reducing component thickness. These exciters also show their suitability for seamless integration into flexible displays, wearable devices, and automotive panels, offering enhanced spatial audio practicality and multifunctional operation, including demonstrative output and sensing. This advancement marks a step toward the convergence of acoustic, haptic, and interactive technologies, for the realization of sustainable and immersive humanmachine interfaces in future electronic and automotive systems.

(La_1-xBi_xSr_0.3)FeO₃ ceramics exhibiting excellent magnetoresistance were synthesized via the conventional solid-state reaction method. The structural and electrical properties were investigated as a function of Bi³⁺ content to evaluate their potential application as temperature sensors. And the sintering temperature and time were 1,200℃ and 4 h, respectively. The structural and electrical properties were investigated as a function of Bi content. With increasing Bi substitution, a slight enhancement in both average grain size and relative sintered density was observed. In particular, the specimen with x = 0.3 exhibited an average grain size of approximately 0.82 μm. All samples demonstrated negative temperature coefficient of resistance (NTCR) behavior, and the electrical resistivity decreased with increasing Bi content. The resistivity of the (La_0.4Bi_0.3Sr_0.3)FeO₃ composition was 4.68 mΩ-cm at 25°C. Additionally, the temperature coefficient of resistance (TCR) and the B_25/75-value, which quantify the sensitivity of resistivity to temperature variations, were found to increase with Bi content. (La_0.4Bi_0.3Sr_0.3)FeO₃ sample exhibited a TCR of 0.43%/°C and a B_25/75-value of 1,096 K at room temperature. The electrical conduction mechanism of the (La_1-xBi_xSr_0.3)FeO₃ system was well described by the small polaron hopping model, wherein thermally activated charge carriers hop between localized Fe-O-Fe sites via electron-phonon interactions.

With the advancement of the information society, the demand for highly integrated and multi-functional electronic devices is rapidly increasing. To meet these demands, high-performance transistors with low power consumption, high-speed operating, and mechanical flexibility are essential. Among various candidates, semiconducting single-walled carbon nanotubes (s-SWCNT)-based transistors, which exhibit intrinsically ambipolar characteristics, have emerged as promising components for CMOS-like circuits. In this study, s-SWCNT were selectively dispersed using rr-P3DDT, a thiophene-based conjugated polymer, and filed-effect transistors (FETs) were fabricated by inducting directional alignment for enhanced charge transport through an off-centered spin-coating process. The electrical characteristics of the fabricated s-SWCNT FETs were evaluated under various thermal annealing conditions (100℃, 150℃, 200℃, and 250℃). Off-centered spin-coated and high temperature annealed s- SWCNT FETs exhibited high field-effect mobilities over 5 cm²/Vs in both p-type and n-type operation, along with ideal Vshaped ambipolar transfer curves. These results indicate a significant enhancement in ambipolar performance due to efficient desorption of residual oxygen and water molecules in active channel via high temperature annealing. Furthermore, CMOS-like inverter circuits demonstrated an ideal inversion voltage (VIN = V_DD/2) and a high voltage gain of approximately 9.5. These findings highlight the potential of SWCNT-based materials for realizing next-generation flexible electronic circuits that combine high-performance, energy efficiency, and simplified solution-processing.

The composite specimens of (1-x)(La_0.7Sr_0.3)MnO₃-xBaTiO₃ (x = 0.05 ~ 0.3) were synthesized using the conventional solid-state reaction method, and the sintering temperature and time were 1,300℃ and 3 hours, respectively. As a result of observing the structural characteristics, the crystal structure of LSMO-BT solid solution was shown in which the rhombohedral LSMO phase and the tetragonal BT phase were separated and distributed, respectively. And fine grains having relatively small and uniformly distributed grains with sizes ranging from approximately 0.4 to 0.5 μm and pores within the specimens were observed. Notably, variations in the BT content did not significantly affect the grain size or porosity distribution, and a relative density of about 90% or more was shown. The resistivity, temperature coefficient of resistance (TCR), and B_25/65-value of the 0.7LSMO-0.3BT specimen at room temperature showed the highest values of 1.94 Ω-cm, 0.292 %/℃, and 464 K, respectively. The resistivity behavior of the LSMO-BT composites matched well with the small polaron hopping conduction model.

Flexible micro-supercapacitors (MSCs) based on 2D MXenes offer strong potential for next-generation energy storage in wearable and integrated electronics, yet still face critical challenges such as limited energy density, mechanical reliability, and scalable large-area manufacturing. This review surveys recent strategies to address these limitations, with a particular focus on fabrication techniques and wafer-level integration approaches. Wafer-scale processing on both rigid and flexible substrates has emerged as a key milestone toward scalable, high-yield industrial production of flexible MSCs. By examining the strengths and drawbacks of current fabrication strategies, this review highlights essential directions for advancing MXene-based flexible MSCs toward practical and widespread application.

Neuromorphic computing, inspired by the biological mechanisms of neural signal transmission, has emerged as a promising technology for efficient and parallel data processing with minimal power consumption. In this study, we developed floating-gate organic thin-film transistors (OTFTs) with self-assembled monolayer (SAM)-based tunneling layers to mimic the characteristics of artificial synapses. The tunneling layers were formed using mixed phosphonic acid SAMs with varying ratios of octadecylphosphonic acid (ODPA) and 12-pentafluorophenoxydodecylphosphonic acid (PFPA). The influence of these ratios on the memory and neuromorphic characteristics of the devices was systematically evaluated. Our results revealed that the ODPA ratio significantly impacts the hysteresis window, with higher ODPA content yielding improved memory characteristics. Conversely, the PFPA : ODPA ratio of 2:1 exhibited the lowest non-linearity (NL = 0.48), demonstrating the potential for highly accurate weight updates in neuromorphic devices. Additionally, pulse width modulation studies showed that a pulse width of 100 ms optimized the linearity and stability of long-term potentiation (LTP) and depression (LTD) characteristics. The combination of sol-gel processed AlOx as a floating-gate layer and tailored SAM-based tunneling layers allowed for precise control of device performance. These findings highlight the importance of molecular engineering in designing SAM layers to balance memory retention and neuromorphic functionality. This study provides a pathway for advancing organic floating-gate transistors as a core component in next-generation neuromorphic computing systems.

In parallel with the efforts to improve the device performance in modern integrated circuits, it is necessary to downscale their core components, field-effect transistors (FETs), generally gauged by their physical gate length. Upon such device scaling, the emergence of the short-channel effect impedes further scaling into the nanometer scale in the silicon VLSI (Very-Large-Scale-Integration) system. To address this issue, two-dimensional (2D) semiconductors, leveraging their atomically thin thickness and dangling-bond-free characteristics, are being highlighted as a material solution for future scaling technology without severe mobility degradation. Despite the expected ideal physical properties, 2D semiconductors have yet to realize their full potential owing to the limited development of integration technology. In this context, we survey and review the tailored van der Waals integration technologies for 2D FETs. In particular, we provide an in-depth study of both van der Waals integrated contact and dielectric methods along with an explanation of customized materials. In essence, this van der Waals integrationcentered approach will be a core strategy to implement the high-performance 2D transistors that meet the demand of FET miniaturization.

Post-metallization annealing (PMA) has been employed in silicon-based CMOS fabrication to enhance MOSFET reliability and performance. However, although deuterium annealing can reduce interface traps between the Si and SiO₂ gate dielectric, it remains insufficient to fully passivate these traps. In this context, a multiple PMA process, including additional hydrogen annealing, is proposed to further reduce dangling bonds. Silicon-based MOSFETs are fabricated to verify the proposed annealing process architecture. Electrical characterization of the threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and carrier mobility (μ_n) is conducted to investigate the impact of the multiple PMA. This study provides a guideline for PMA in MOSFET fabrication, with improvements in both performance and reliability.

Piezoelectric thin films have become increasingly significant in applications such as MEMS devices, wearable electronics, and lab-on-a-chip systems due to the miniaturization and integration of electronic devices. For piezoelectric thin films, even when an electric signal is applied in the thickness direction, greater deformation can often be observed in the in-plane direction, which is perpendicular to the electric field. Therefore, piezoelectric thin film devices are frequently designed using the transverse mode. As a result, it is crucial to evaluate piezoelectric thin films by measuring their transverse piezoelectric coefficient. This tutorial paper introduces a method for evaluating the effective transverse piezoelectric coefficient (e_31,f) of piezoelectric thin films using laser Doppler vibrometry (LDV). Additionally, the paper outlines a step-by-step procedure for measuring e31,f while using Bi_1/2Na_1/2TiO₃-based piezoelectric thin films as an example. This tutorial is expected to provide a practical and valuable method for measuring and analyzing the transverse piezoelectric properties, thereby supporting the development of new piezoelectric thin film materials.

This study explores the realization of high-efficiency white LED lighting by applying cyan-emitting quantum dot (CQD) and red-emitting quantum dot (R-QD) deposition without any host matrix onto a yellow-emitting phosphor-in-glass (YPIG) substrate using an aerosol-assisted deposition (AAD) process. The AAD process facilitates the direct formation of densely packed QD-deposited layers on the substrate, effectively addressing challenges such as optical efficiency loss and degradation typically associated with organic host matrices. C-QD and R-QD coatings, deposited with thicknesses of 0.84 μm and 0.77 μm on the upper and lower Y-PIG substrate, exhibited robust color conversion properties. These films achieved a luminous efficacy of 77 lm/W and a high color rendering index (CRI) of 96.8 under blue light excitation. The dual-layer structure produced highquality light closely resembling natural daylight, as confirmed through real image. Consequently, the research suggests the potential of AAD-based QD deposition to achieve superior performance without relying on host matrices, offering a viable solution for high-efficiency lighting applications. Further optimization of deposition parameters and exploration of diverse substrates and QD material combinations are expected to expand the applicability of this technique in future research.

Iron oxide nanoparticles (NPs) have gained significant attention for their broad applicability in biomedical imaging, soft robotics, and catalysis owing to their exceptional magnetic properties and biocompatibility. A key challenge in maximizing their functionality lies in achieving a uniform size distribution and dispersity, alongside strong interfacial affinity with the surrounding medium that are essential for optimizing magnetic behavior and processibility. In this study, we present a facile solvothermal synthesis of monodisperse iron oxide NPs with tunable size and controllable surface hydrophobicity by varying precursors, capping agents, and solvents. By varying these synthesis parameters, we demonstrate a clear correlation between NP size, dispersity, and key magnetic properties, including saturation magnetization (MS) and coercivity (HC). This advancement in synthesis methodology offers a reliable, efficient approach for producing high-quality iron oxide NPs, which makes possible for practical use of them across a range of technological and biomedical applications.

Recently, as environmental issues caused by gas stoves have led to the widespread adoption of induction appliances, specialized cookware for induction is essential. However, due to the inability of ceramic containers to be directly used on induction cooktops, a conductive coating is required on the bottom of the cookware, presenting limitations such as complex deposition processes and extended coating times in existing methods including thermal spraying, dip coating, and transcription method. We confirmed the potential of heat-resistant cookware for induction use by coating the bottom of the ceramic container with Ag through a simple manufacturing process of screen-printing and measuring its thermal conductivity and reliability. The Ag-coated ceramic cookware produced by screen-printing demonstrated similar thermal conductivity and reliability to those made using the traditional method of transfer printing. In addition, the adhesive strength before and after thermal shock testing was even superior in the screen-printing method, which suggests a higher expected lifespan. As a result, it is expected that induction-compatible heat-resistant ceramic containers with excellent performance and lifespan will be manufactured through the screen-printing process, which is more cost-effective and efficient compared to other methods.

Memristors, as next-generation memory devices, have garnered significant academic interest. Among them, TiO₂/TiO_2-x based memristors have particularly attracted substantial scholarly attention. Research on the activation and stability of TiO2 based memristor devices through process parameters is essential. Here, to determine the impact of process parameters on the activation of TiO₂/TiO_2-x based memristor devices, we fabricated the memristor devices using a sputtering system andconducted annealing at 400℃. Additionally, to analyze the electrical characteristics of the devices, we measured the I-V curves and C-V curves. Also, we examined TiO₂/TiO_2-x based memristor devices surface using SEM. Consequently, it was observed that the devices subjected to annealing exhibited improved hysteresis curves in the I-V characteristics, a reduced bandgap, and changes in resistance compared to the non-annealed devices. The retention test results further demonstrated that the set/reset characteristics of the devices were stable, confirming their potential applicability as memory devices.

Various process modifications have been used to minimize SiO₂ gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.

Climate conditions, especially transport and storage, are a very important factor in the process of sampling and testing insulation oil in the field. The samples of insulating oil exposed to the atmosphere affect the dielectric strength, total acid number and moisture test value by oxygen and high humidity environment and may also affect the results according to the criteria specified in each test. Therefore, reliable test values for insulating oil testing require consideration of the atmospheric environment of the test site, including oxygen and humidity. In this paper, each test was conducted on insulating oil exposed to various time and humidity environments, and the effect of the atmospheric environment on the test results was analyzed by comparing and analyzing with the first insulating oil.

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga₂O₃ are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

Piezoelectric ceramics play an important role in various electronic applications. However, traditional ceramics are difficult to be used in some complicated structures, due to their low flexibility and high brittleness. To solve this problem, this study prepared and investigated ceramic/polymer composites that can utilize a good flexibility of polymers. Polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) and 0.77(Bi_1/2Na_1/2)TiO₃-0.23SrTiO₃ (BNST23) ceramics were selected to fabricate the composites. Ceramic/polymer composites were prepared using various volume fractions of BNST23 ceramics. The distribution of piezoceramic particles in BNST23/PVDF-TrFE composites was investigated using optical microscopy (OM) and scanning electron microscopy (SEM). The dielectric and piezoelectric properties of the composites were significantly influenced by the volume fraction of the piezoelectric ceramics. As a result, the highest piezoelectric constant (d33) of 56 pC/N was obtained in a composites with 70% volume fraction of BNST23 ceramics. Accordingly, it is expected that BNST23/PVDF-TrFE composites can be applied to various sensor applications.

The Internet of Things (IoT) device is a key component for Industry 4.0, which is the network in homes, factories, buildings, and infrastructures to monitor and control the systems. To demonstrate the IoT network, batteries are widely utilized as power sources, and the batteries inevitably require repeated replacement due to their limited capacity. Magneto-mechanoelectric (MME) generators are one of the candidate to develop self-powered IoT systems since MME generators can harvest electricity from stray alternating current (AC) magnetic fields arising from electric power cables. Herein, we report a magnetomechano- triboelectric generator enabled by a ferromagnetic-ferroelectric composite. In the triboelectric nylon matrix, a ferromagnetic carbonyl iron powder (CIP) was introduced to induce magnetic force near the AC magnetic field for MME harvesting. Additionally, a ferroelectric ceramic powder was also added to the MME composite material to enhance the chargetrapping capability during triboelectric harvesting. The final ferromagnetic-ferroelectric composite-based MME triboelectric harvester can generate an open-circuit voltage and a short-circuit current of 110 V and 8 μA, respectively, which were enough to turn on a light emitting diode (LED) and charge a capacitor. These results verify the feasibility of the MME triboelectric generator for not only harvesting electricity from an AC magnetic field but also for various self-powered IoT applications.

We have studied the effects of Ag on the characteristics of Sn₄₈In₅₂Ag_x (wt%) low-melting solders for photovoltaic ribbons. The Sn₄₈In₅₂ (wt%) solder coexisted in the InSn₄ and In₃Sn alloys. Ag atoms added in the solder formed an AgIn₂ alloy by reacting with some part of In atoms, while they did not react with Sn atoms. The addition of Ag atoms in the Sn₄₈In52Agx (wt%) solders showed useful results; an increase in peel strength and a decrease in melting temperature. The peel strength of the ribbon plated with the Sn⁴⁸In⁵² (wt%) solder was 53.6 N/mm², and that of the Sn⁴⁸In⁵²Ag1 (wt%) solder largely increased to 125.1 N/mm². In the meanwhile, the melting temperature of the Sn₄₈In⁵² (wt%) solder was 119.2℃, and that of the Sn48In52Ag1 (wt%) solder decreased to 114.0℃.

Piezoelectric ceramics play an important role in electrical and electronic devices such as sensors, actuators, and microelectronic devices. However, traditional ceramics are difficult to be used in various process industries due to their high brittleness and low flexibility. Therefore, piezoelectric paint sensors have been designed for application to the curved surfaces of complicated structures. Furthermore, recently, significant attention has been focused on the development of paint sensors that can be used as structure health monitoring sensors for vibration, impact, and acoustic emission. Several studies have successfully demonstrated the possibility that smart paint sensors can take the place of traditional ceramic sensors. In this review, we briefly introduce the concept of the piezoelectric paint sensors and the expected application field as well as their preparation and history.

Nitrogen-doped graphene was synthesized by a hydrothermal method using graphene oxide (GO) as the raw material, urea as the reducing agent and nitrogen as the dopant. The morphology, structure, composition and electrochemical properties of the samples are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), nitrogen adsorptiondesorption analysis, electrical conductivity and electrochemical tests. The results show that urea can effectively reduce GO and achieve nitrogen doping under the hydrothermal conditions. By adjusting the mass ratio of raw materials to dopants, the graphene with different nitrogen doping contents can be obtained; the nitrogen content range is from 5.28~6.08% (atomic fraction percentage).When the ratio of dopant to urea is 1:30, the nitrogen doping content reaches a maximum of 6.08%.The supercapacitor performance test shows that the nitrogen content prepared by the ratio of 6.08% is the best at 0.1 A·g^-1. The specific capacitance is 95.2 F·g^-1.

Flexible fiber- or yarn-based one-dimensional (1-D) energy storage devices are essential for developing wearable electronics and have thus attracted considerable attention in various fields including ubiquitous healthcare (U-healthcare) systems and textile platforms. 1-D supercapacitors (SCs), in particular, are recognized as one of the most promising candidates to power wearable electronics due to their unique energy storage and high adaptability for the human body. They can be woven into textiles or effectively designed into diverse architectures for practical use in day-to-day life. This review summarizes recent important development and advances in fiber-based supercapacitors, concerning the active materials, fiber configuration, and applications. Active materials intended to enhance energy storage capability including carbon nanomaterials, metal oxides, and conductive polymers, are first discussed. With their loading methods for fiber electrodes, a summary of the four main types of fiber SCs (e.g., coil, supercoil, buckle, and hybrid structures) is then provided, followed by demonstrations of some practical applications including wearability and power supplies. Finally, the current challenges and perspectives in this field are made for future works.

Piezoelectric actuators, which utilize piezoelectric crystals or ceramics, are commonly used in precision positioning applications, offering high-speed response and precise control. However, the use of low-performance ceramics and expensive single crystals is limiting their versatile use in the actuator market, necessitating the development of both high-performance and cost-effective piezoelectric materials capable of delivering higher forces and displacements. The use of textured Pb (lead)-based piezoelectric ceramics formed by so-called templated grain growth method has been identified as a promising strategy to address the performance and cost issue. This review article provides insights into recent advances in texturing Pb-based piezoelectric ceramics for improved performance in actuation applications. We discussed the relevant issues in detail focusing on current challenges and emerging trends in the textured piezoelectric ceramics for their reliability and performance in actuator applications. We discussed in detail focusing on current challenges and emerging trends of textured piezoelectric ceramics for their reliability and performance in actuator applications. In conclusion, the article provides an outlook on the future direction of textured piezoelectric ceramics in actuator applications, highlighting the potential for further success in this field.

Underwater wireless communication is a challenging issue for realizing the smart aqua-farm and various marine activities for exploring the ocean and environmental monitoring. In comparison to acoustic and radio frequency technologies, the visible light communication is the most promising method to transmit data with a higher speed in complex underwater environments. To send data at a speedier rate, high-performance photodetectors are essentially required to receive blue and/or cyan-blue light that are transmitted from the light sources in a light-fidelity (Li-Fi) system. Here, we fabricated high-performance organic phototransistors (OPTs) based on P-type donor polymer (PTO2) and N-type acceptor small molecule (IT-4F) blend semiconductors. Bulk-heterojunction (BHJ) PTO2:IT-4F photo-active layer has a broad absorption spectrum in the range of 450~550 nm wavelength. Solution-processed OPTs showed a high photo-responsivity >1,000 mA/W, a large photo-sensitivity >10³, a fast response time, and reproducible light-On/Off switching characteristics even under a weak incident light. BHJ organic semiconductors absorbed photons and generated excitons, and efficiently dissociated to electron and hole carriers at the donor-acceptor interface. Printed and flexible OPTs can be widely used as Li-Fi receivers and image sensors for underwater communication and underwater internet of things (UIoTs).

We studied the various characteristics of Sn-In (wt%) Pb-free solders for photovoltaic ribbon application. The solders near the eutectic composition of Sn₄₈In₅₂ (wt%) existed in InSn₄ and In₃Sn alloy phases, and in In crystal phase, but not in Sn crystal phase. In addition, the InSn4 phase (γ-alloy) existed separately from the In₃Sn (β-alloy) and the In phase confirmed by an SEM-EDS-mapping. The melting temperature of the eutectic solder of Sn₄₈In₅₂ (wt%) was 119.2℃, and when the Sn content decreased in reference to the eutectic composition, it slightly increased to 121.4℃, but when the Sn content increased, it remained almost constant at 119.1℃. The peel strength of the ribbon plated with the Sn₄₂In₅₈ (wt%) solder was 38.7 N/㎟, and it tended to increase when the Sn content increased. The peel strength of the eutectic Sn₄₈In₅₂ (wt%) solder was 53.6 N/㎟, and that of the Sn₅₁In₄₉ (wt%) solder was 61.6 N/㎟ that was the highest.