SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

Citations

• Dislocation defects in 4H‑SiC crystals grown by physical vapor transport: Evolution, origins, and control strategies
  Peng Gu, Tianle Wang, Zefeng Guan, Jiliang Zhu
  Journal of Materials Science & Technology.2027; 287: 232.     CrossRef
• Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation
  Asghar Ali, Piotr A. Piatkowski, Hussain Alawadhi, Ali S. Alnaser
  ACS Applied Electronic Materials.2022; 4(12): 6076.     CrossRef