The resistive switching characteristics of resistive random access memory (ReRAM) based onamorphous Ge0.5Se0.5 thin films have been demonstrated by using Ti/Ag nanocrystals/Ge0.5Se0.5/Ptstructure. Ag nanocrystals (Ag NCs) were spread on the amorphous Ge0.5Se0.5 thin film and they playedthe role of metal ions source. As a result, comparing the conventional Ag/Ge0.5Se0.5/Pt structure, thisTi/Ag NCs/Ge0.5Se0.5/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS)characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DCendurance(> 100 cycles), and the excellent data retention (> 104 sec) properties were found from theTi/Ag NCs/Ge0.5Se0.5/Pt structured ReRAM device.

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with HfO2thin films as a transition layer. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/HfO2/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> 104 sec) were achieved.

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.