The rapid advancement of large-scale language models and artificial intelligence technologies has highlighted the importance of data processing efficiency. This study outlines a measurement optimization method for high-speed pulse equipment to accurately analyze the operating dynamics of ReRAM, a core hardware component for simulating neural networks. An optimized evaluation methodology combining connection compensation and a dual-channel configuration was established to minimize measurement errors caused by parasitic resistance and capacitance during pulse measurements using the Keithley 4200A-SCS and 4225-PMU modules, and to address HRS/LRS measurement errors caused by mismatches between the measurement range and source limits. The proposed precision measurement guidelines can be applied to the evaluation of semiconductor devices that require pulse measurements, such as transistors and DRAM.

Recently, with the miniaturization of GIS, there is a need for the miniaturization of spacers as accessories. Miniaturized spacers make it difficult to secure adequate insulation distances, resulting in a more concentrated electric field at the triple junction of high-voltage (HV) conductor-insulator (spacer)-insulation gas (SF₆), which is a weakness in GIS. Therefore, by introducing a new concept design technology, functionally graded material (FGM), which is recently applied to various materials and parts industries, three-dimensional control of the dielectric constant distribution in a spacer can be expected to alleviate triple-junction electric field occupancy and improve insulation performance. In this study, we propose an optimized model using NSGA-II to optimize the permittivity distribution of FGM applied spacer.

It was proven that the light outputs of blue GaN-based light-emitting diodes (LEDs) was seriously influenced by the application of external stress. We have simulated the wave function overlap of an electron and hole, which are significantly reduced by the development of stress. Consequently, its internal quantum efficiency decreased from 67.0% to 37.5%. To experimentally investigate the effect of stress, we designed and prepared a special zig system. By applying external tensile stress to compensate for the compressive stress innately developed in Blue LEDs, it was found that the optical output was greatly enhanced from 83.1 mcd to 117.2 mcd at a current of 100 mA, an increase of approximately 41%. In contrast, when the compressive stress is developed more by external compressive stress, we observed that the light output power was reduced from 89.0 mcd to 80.7 mcd, a decrease of approximately 9.3%.

In this study, the characteristics of electrostatic attenuation in plain shape glass filament sample (0.29 mm thickness, cross section of 12.25 cm2, 16 cm2, 20.25 cm2) for insulator has been measured at temperature of 5℃∼ 38℃, humidity of 50%∼90%. The results of this study are as follows. In case of samples that the cross section is 12.25 cm2, 16 cm2, 20.25 cm2 at humidity of 50%∼90%, it found that the electrification voltage of electrostatic increased with increasing temperature, with a return to decrease at 20℃. In case of samples that the cross section is 12.25 cm2, 16 cm2, 20.25 cm2 at temperature of 5℃~38℃, it found that the electrification voltage of electrostatic decreased with increasing humidity. In case of the sample at temperature of 20℃ and humidity of 65%, 75%, it found that the electrification voltage of electrostatic increased with increasing cross section. In case of the sample at humidity of 65% and cross section of 12.25 cm2, the time that it takes to reduce electrification voltage of electrostatic in half decreased to 0.912s, 0.736s, 0.673s with increasing temperature to 10℃ 20℃, 30℃.

In this study, the electrification voltage of electrostatics for silicone rubber sample(4 cm × 4 cm × 0.103 cm) following immersion with contaminants of 2 ml, 5 ml, 10 ml for six hours has been measured in through the applied voltage of 10 kV DC at temperature of 80℃∼110℃, humidity of 50%∼90%. The results of this study are as follows. In case the contaminants is constant, it found that the electrification voltage of electrostatic decreased with increasing temperature and humidity to 35℃, 90%. In case of 2 ml of contaminants concentration, it found that the electrification voltage of electrostatic decreased with increasing temperature and humidity to 35℃, 50%. In case of the sample at temperature of 15℃ and humidity of 50%, it found that the electrification voltage of electrostatic decreased with increasing contaminants to 10 ml.

We investigated the dielectric relaxation properties 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics with CuO addition. With increasing CuO addition, the lattice parameter was increased by substitution of small amount Cu2+ ion in B-site of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics. Also the grain size and the maximum dielectric constant of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics was decreased with increasing amounts of CuO addition. Moreover, the diffused phase transition properties (γ) of 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics was increased by compositional fluctuation with increasing of CuO amount, changed from 1.45 at 1 wt% CuO addition to 1.94 at 7 wt% CuO addition.

In this study, we have come to the following conclusions regarding to the electrification properties (electrostatic electrification voltage and electrification relaxation time) of electrostatics in the three type of specimen (size: 4 cm × 4 cm × 0.103 cm) of silicone rubber which is mixed with the ATH (Aluminium Trihydrate(Al(OH3)) of 30 phr, 60 phr, 120 phr as reinforcing filler. The electrification properties of electrostatics were measured for the different mixing ratio of ATH with the applied voltage of DC 10 kV at the temperature range of 10℃∼30℃ and humidity range of 60%∼80%. When the temperature remained constant, the electrical resistance decreased as the humidity increasing in the range of 60%, 70%, 80%. In contrast, when the humidity remained constant, the electrical resistance increased as the temperature increasing in the range of 10℃, 20℃, 30℃. Regarding these results, may be it is because the absorption of O-H molecule appeared in the silicone specimen. It was confirmed that when the temperature remained constant, the electrification relaxation time decreased as the humidity increased. In contrast, when the humidity remained constant, the electrification relaxation time increased as the temperature increased.

We investigated dielectric relaxation properties of 0.95(Na0.5K0.5)NbO3-0.05BaTiO3 ceramics byaddition (0∼0.3 wt%) of (Ba,Ca)SiO3 glass frit. All composition of 0.95(Na0.5K0.5)NbO3-0.05BaTiO3 added(Ba,Ca)SiO3 glass frit showed the same crystallographic properties, coexistence of orthorhombic andtetragonal phase. By increasing addition of (Ba,Ca)SiO3 glass frit, the Curie temperatures of0.95(Na0.5K0.5)NbO3-0.05BaTiO3 ceramics were decreased, whereas maximum dielectric constants of0.95(Na0.5K0.5)NbO3-0.05BaTiO3 ceramics were dramatically increased. Especially the deviations of Curietemperature 0.95(Na0.5K0.5)NbO3-0.05BaTiO3 ceramics were increased by increasing amount of(Ba,Ca)SiO3 glass frit, and it indicated that 0.95(Na0.5K0.5)NbO3-0.05BaTiO3 ceramics added (Ba,Ca)SiO3glass frit have relaxor characteristics.