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Optimization of Capacitor Threshold V(T) Implantation for Planar P-MOS DRAM Cell
J Korean Inst Electr Electron Mater Eng
2006;19(2):126-129.
Published online February 1, 2006
DOI:
https://doi.org/10.4313/JKEM.2006.19.2.126
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Effects of Ozone Oxidation on the Contact Resistance of DRAM Cell
Jae Seung Choe, Seung Ug Lee, Bong Jo Sin, Geun Hyeong Park, Jae Bong Lee
J Korean Inst Electr Electron Mater Eng
2004;17(2):121-126.
Published online February 1, 2004
DOI:
https://doi.org/10.4313/JKEM.2004.17.2.121
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