An investigation was conducted to determine whether the ratio of the fluid to the charged particles affects the panel reflexibility rate and the drifting current flowing in the panel, in electrophoretic-based electronic paper. In this regard, three panels were produced in this study with the ratio of the charged particles to the fluid set as 1:5, 1:1, and 5:1. Each sample was driven using an identical input pulse, for which the current flowing in the panel and the output voltage of the photodiode were measured for the panel reflexibility rate. Consequently, the drifting current initially exhibited a peak value and a saturated value at a later point. This value was proportional to the ratio of the charged particles, and it was similar to this ratio when it is higher than 1:1. The output voltage of the photodiode due to the panel reflexibility rate was proportional to the ratio of the charged particles. However, the response speed decreased if the ratio was higher than 1:1. It is expected that the results of this study will contribute to the analysis of the charging of charged particles in electrophoretic-based electronic paper, and the selection of an appropriate concentration.

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a TiO₂/Al₂O₃ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick TiO₂ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in TiO₂ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the TiO₂ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

We fabricated highly flexible Mn-doped SnO2 (MTO)/Ag/MTO/polydimethylsiloxane (PDMS)/MTO multilayer transparent conducting films. To reduce refractive-index mismatching of the MTO/Ag/MTO/polyethylene terephthalate (PET), index-matching layers were inserted between the oxide-metal-oxide-structured films and the PET substrate. The PDMS layer was deposited by spin-coating after adjusting the mixing ratio of PDMS and hexane. We investigated the effects of the index-matching layer on the color and reflectance differences with different PDMS dilution ratios. As the dilution ratio increased from 1:100 to 1:130, the color difference increased slightly, while the reflectance difference decreased from 0.62 to 0.32. The MTO/Ag/MTO/PDMS/MTO film showed a transmittance of 87.18~87.68% at 550 nm. The highest value of the Haacke figure of merit was 47.54×10^-3 Ω^-1 for the dilution ratio of 1:130.

A textured front surface is required in high efficiency silicon solar cells to reduce reflectance and to improve light trapping. Wet etching with alkaline solution is usually applied for mono crystalline silicon solar cells. However, alkali texturing method is not appropriate for multi-crystalline silicon wafers due to grain boundary of random crystallographic orientation. Accordingly, acid texturing method is generally used for multi-crystalline silicon wafers to reduce the surface reflectance. To reduce reflectivity of multi-crystalline silicon wafers, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE condition by different RF power condition (100, 150, 200, 250, 300 W).

In the present study, the CuNx-Cu-CuNx layer the partial pressure ratio Cu metal of Ar and N2 gas using a DC magnetron sputtering device, was generated by the In-situ method. CuNx layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. CuNx layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. Ar:N2 gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of △ Ra surface roughness of 0.467. It was derived CuNx band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the 1.2 ㏀ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: 4/270 ㎛) is in the range of the reference operation.

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, α-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30∼40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of TiO2/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and (N2+O2) gas mixture. TiO2 of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, thecrystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200∼1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.