Quantum dots (QDs) are semiconductor nanocrystals with sizes on the order of several nanometers, whose bandgaps can be tuned by controlling the particle size. Owing to this bandgap tunability, QDs can absorb near-infrared (NIR) and short-wave infrared (SWIR) light, spectral regions that are difficult to access with conventional silicon-based devices. However, colloidal QDbased infrared photodetectors still suffer from intrinsically high dark current, trap-induced noise, and limited response speed. As a result, they exhibit fundamental performance gaps in terms of detectivity and speed–bandwidth product compared to epitaxial infrared detectors, highlighting the need for structural and architectural design strategies to overcome these limitations. In this review, we discuss recent advances in enhancing the spectral selectivity and sensitivity of infrared photodetectors through three-dimensional optical architectures, including metasurfaces and metamaterials. We focus in particular on design strategies and the underlying mechanisms responsible for performance enhancement, and we outline how structural approaches can be leveraged to effectively control the sensitivity and wavelength selectivity of QD-based infrared detectors.
Quantum dots (QDs) offer size-dependent tunability across the infrared to ultraviolet range with narrow emission linewidths and high color purity, making them highly attractive for next-generation light-emitting devices. Quantum dot lightemitting diodes (QLEDs) further combine precise spectral control with scalable, low-cost solution processing, positioning them as strong candidates for wearable, stretchable, and AR/VR display technologies. However, conventional single-emission QLEDs suffer from charge imbalance, efficiency roll-off, and limited operational lifetime, necessitating new device architectures. Tandem QLEDs, which vertically stack multiple emissive layers (EMLs) connected by charge generation layers (CGLs), provide a compelling solution by enabling higher luminance, improved charge balance, and longer lifetime at equivalent current density. The CGL serves as the interfacial region mediating charge injection and generation between adjacent EMLs, directly determining device efficiency and stability. This review highlights recent progress in CGL engineering, categorizing representative designs into planar heterojunction, inorganic-based, and dipole-based configurations. Comparative analysis of their formation mechanisms, material systems, and process compatibilities reveals evolving charge-control strategies that extend beyond material selection. These insights establish design principles for next-generation tandem QLEDs with enhanced efficiency, durability, and manufacturability.
This study aimed to elucidate factors limiting power conversion efficiency (PCE) in GaN-based micro-light-emitting diodes (μ-LEDs). To this end, we investigated the effects of operating temperature and chip-size of μ-LEDs on their efficiency. For the investigation, 460 nm-emitting μ-LEDs with various chip-sizes were fabricated; then their characteristics were carefully measured from 100 to 400 K. As the chip-size decreases and the operating temperature increases, their PCE and external quantum efficiency (EQE) decrease, while voltage efficiency (VE) increases. This indicates that the EQE plays a more important role than the VE in determining the PCE of μ-LEDs. Particularly, for a chip-size of 20 × 20 μm2, the EQE was very lower and the ideality factor was unexpectedly higher compared to the others for all operating temperatures, which is believed to be due to the critical plasma damage at the sidewall during dry-etching process for the chip-size < 20 × 20 μm2.
This study explores the realization of high-efficiency white LED lighting by applying cyan-emitting quantum dot (CQD) and red-emitting quantum dot (R-QD) deposition without any host matrix onto a yellow-emitting phosphor-in-glass (YPIG) substrate using an aerosol-assisted deposition (AAD) process. The AAD process facilitates the direct formation of densely packed QD-deposited layers on the substrate, effectively addressing challenges such as optical efficiency loss and degradation typically associated with organic host matrices. C-QD and R-QD coatings, deposited with thicknesses of 0.84 μm and 0.77 μm on the upper and lower Y-PIG substrate, exhibited robust color conversion properties. These films achieved a luminous efficacy of 77 lm/W and a high color rendering index (CRI) of 96.8 under blue light excitation. The dual-layer structure produced highquality light closely resembling natural daylight, as confirmed through real image. Consequently, the research suggests the potential of AAD-based QD deposition to achieve superior performance without relying on host matrices, offering a viable solution for high-efficiency lighting applications. Further optimization of deposition parameters and exploration of diverse substrates and QD material combinations are expected to expand the applicability of this technique in future research.
Quantum computing is set to transform the field of materials science, offering computational methods that could far surpass conventional approaches for tackling intricate material design challenges. This review introduces the foundational principles of rapidly growing quantum computing and its application trends in the design and analysis of nanomaterials. We explain how quantum speedup, achieved through quantum algorithms utilizing qubit superposition and entanglement, is applied to material design. Additionally, the principles and research trends of quantum variational methods, including the Variational Quantum Eigensolver (VQE), which has recently gained attention as a quantum algorithm simulation technique, will be discussed. By combining new techniques based on quantum algorithms with the quantum speed-up, the quantum computing is expected to offer new insights into data-intensive materials research and provide innovative methodologies for the development of new functional materials. With the advancement of quantum algorithms, the field of materials science could enter a new era, enabling more precise and efficient approaches in materials design and functional analysis.
The purpose of this paper is to help those who research and develop solar cells in university laboratories and industrial sites understand the most basic and important quantum efficiency measurement and analysis method in analyzing solar cell performance. Starting with the definition of quantum efficiency, we calculate the theoretical current density according to the band gap of the solar cell material from the solar spectrum, along with a detailed introduction to the measurement and analysis methods, and measure and analyze the theoretical current density and quantum efficiency. We discuss in depth how to analyze the performance of solar cells through Quantum efficiency measurement and analysis of solar cells is a very useful method that can give intuition to solar cell performance analysis as it can analyze solar cells according to depth (front emitter, bulk, rear surface). Students and researchers who study solar cells with a deep understanding of theoretical current density and quantum efficiency measurement analysis are expected to use it as a basis for analyzing solar cell performance.
Color conversion layer refers to a layer that converts the blue light emitted from the backlight into the red and green light. Heavy metal-free quantum dots and perovskite nanocrystals have attracted great attention as base materials for color conversion layers due to their outstanding optical characteristics. Here, we review recent advances in the development of color conversion layers based on quantum dots. First, we overview the representative optical characteristics of quantum dots and perovskite nanocrystals, and then introduce printing techniques for color converting layers including photolithography, inkjet printing, and nanoimprinting. Finally, we conclude this review with a brief perspective.
Electrohydrodynamic jet (e-jet) printing, a type of direct contactless microfabrication technology, is a versatile fabrication process that enables a wide range of micro/nanopattern arrays by applying a strong electric field between the nozzle and the substrate. In general, the morphology and the thickness of polymers/quantum dot micropatterns show a systematic dependence on the diameter of the nozzle and the ink composition with a fully automated printing machine. The purpose of this report is to provide typical examples of e-jet printed micropatterns of polymers/quantum dots to explain the effect of each process variable on the result of experiments. Here, we demonstrate several operating conditions that allow high-resolution printing of layers of polymers/quantum dots with a precise control over thickness and submicron lateral resolution.
In this work, we synthesized alloy-core InZnP quantum dots, which are more efficient than single-core InP quantum dots, using a solution process method. The effect of synthesis conditions of alloy core on optical properties was investigated. We also investigated the conditions that make up the gradient shell to minimize defects caused by lattice mismatch between the InZnP core and ZnS is 7.7%. The stable synthesis temperature of the InZnP alloy core was 200℃. Quantum dots consisting of three layered ZnSe gradient shell and single layered ZnS exhibited the best optical property. The properties of quantum dots synthesized in 100 ml and in 2,000 ml flasks were almost equal.
A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).
We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/ shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of bandgap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.
In this study, the physical and optical properties of ZnS:Mn2+ Quantum Dot prepared by wet-process condition with Mn/Zn ratio was valuated. The powder characteristics and optical behavior were investigated through XRD, TEM and Photo spectrometer exicted by various UV light source. We found the main peak of ZnS (111) was shifted by 0.8 degree to low angle position with increasing stirring energy from 200 RPM to 600 RPM, which is thought to be the increase of lattice defects during wet process. The photo luminescence at 600 RPM shows also higher blue intensity which is well correlated with XRD results. With increasing Mn/Zn ratio, the PL intensity become higher and shifed by 8.5nm to right side, by the increment of substitutional Mn2+ ions.
Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic CsPbX3(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.
Cs3Sb photocathode was formed by newly developed process and successive in-situ lightingdevices were fabricated in a process chamber. R, G, and B phosphors were applied on the anode plate,respectively. Major parameters such as brightness, power consumption, and efficacy were measured. Thewavelength of LED excitation source was 450 nm. Both high power and low power modes were appliedin the measurement. Measurement values were clearly differentiated by the voltage application modes. The measured values of each parameter was good enough to be applied for general lighting source. Theresults showed that Cs3Sb photocathode formed in atmospheric conditions was functioning as good as thephotocathode formed in UHV conditions, and thus it could be applied to advanced lighting devices.
We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.
In this study, we report the doping effect of graphene quantum dots (QDs) in nematic liquid crystal (NLC) system on rubbed polyimide (PI) surface. The good LC alignment and high thermal stability in QD-LC cell system on rubbed PI surfaces can be measured. Also, the low threshold voltage of QD-TN cell was observed about 2.77 V. The fast response time of 13.2 ms for QD-TN cell can be achieved. Finally, the good voltage holding ratio of QD-TN cell on rubbed PI surface was measured.
An optical model is proposed in the white LED using phosphor and LED chip. In this paper a new model that describes the absorption rate and quantum efficiency with increasing the mixing ratio of phosphor in silicone, and the allotment of the phosphor absorption optical power in the several phosphor mixing in the silicone. Single phosphor in silicone from the optical measurement data before and after molding, the solution to get the blue optical power and the phosphor emission optical power is proposed. By these solution the absorption rate and the quantum efficiency was obtained. The model with single phosphor mixing in the silicone the validity was confirmed.
The Hall factor in a quantum well structure with X or L-type indirect conduction valleys is calculated for various strain conditions. The two-dimentsional constant energy of occupied valleys are proven to be identical. As a result the Hall factor depends on the direction of occupied valleys to the growth direction, regardless of the number of occupied valleys. This work is widely applicable to the two-dimensional structure with indirect conduction minima for any growth direction and under different strain conditions.
The water soluble quantum dots (QDs) are synthesized by the phase transfer and silica coating reaction. The photoluminescence intensity of silica-coated QDs are mainly affected by the amount of phase transfer agent, SDS (sodium dodecyl sulfate), and the maximum value is obtained at the cmc (critical micell concentration) concentration of SDS in the phase transfer reaction. Based on fluorescence spectra and field emission transmission electron microscope (FETEM), the energy transfer rate by forster resonance energy transfer (FRET) is increasing with the thickness of the silica shell coated on CdSe/ZnS QDs.
The spherical mesoporous silica is synthesized and incorporated with CdSe/ZnS quantum dots(QDs) for preparing micro beads to detect toxic and bio-materials with high sensitivity. The spherical silica beads with the brunauer-emmett-telle(BET) average pore size of 15 nm were prepared with a ratio 1, 3, 5-trimethylbenzen, as a swelling agent, to the block-copolymer template surfactant of over 1 and under vigorous mixing condition. The surface of spherical mesoporous silica is modified using octadecylsilane for incorporating QDs. Based on photoluminescence(PL) spectra, the relative brightness of mesoporous silica beads incorporated with 10 nM of QDs is 79,000 times brighter than that of Rodamine 6 G.
Optical gain characteristics of 1.3 ㎛ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.
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