Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×10¹¹ Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.

SnO2 nanoparticles were synthesized by flame spray pyrolysis, which were directly deposited on Pt interdigitated substrates. Gas sensing performance was evaluated for various gases such as H2, CO, H2S, and NH3, and it was compared with that of commercial SnO2 nanopowder. The synthesis of SnO2 nanoparticles was also conducted in various solvents. As a result, the primary particle size was changed with the solvent of precursor solution, and their H2 sensing properties were significantly affected.