Single-layer graphene is grown directly on Ti-buffered SiO₂ at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

In this study, the change of optical characteristics was studied according to the micro optical pattern provided by photo lithography followed by thermal reflow process. The shape and luminance variation with micro pattern was evaluated by SEM and spectrometers. Also, we analyzed the luminance characteristics using the 3D-optical simulation (Optis works) program. As a result, we found that the radius of curvature(R) in micro pattern is decreased up to 77%(150℃) compared to the radius of curvature at the condition 100℃, which is caused by efficient reflow of organic material without chemical changes. The highest enhancement of brightness with optimum micro pattern was obtained at the condition of 120℃ reflow process. The brightness gain with optical micro patterns is more than 15% at the condition of R=16.95 um, θ =77.14° compared to original optical source. The results of light simulation with various radius of curvature and side angle of pattern shows the similar result of experiment evaluation of light behavior on optical micro patterns. It is regarded that the more effect on light enhancement was contributed by side angle which is effective factor on light reflection, rather than the curvature of micro-patterns.