We studied white organic light-emitting diodes using blue fluorescent and red phosphorescent materials.White single OLEDs were fabricated using SH-1 : BD-2 (3 vol.%) and CBP : Ir(mphmq)2(acac) (2 vol.%) as emitting layer (EML). The white single OLED using SH-1 : BD-2 (3 vol.% 8 nm) / CBP : Ir(mphmq)2(acac) (2vol.% 22 nm) as emitting layer showed maximum current efficiency of 8.8 cd/A, Commission Internationale del``Eclairage (CIE) coordinates of (0.403, 0.351) at 1,000 cd/㎡, and variation of CIE coordinates with (0.402 ±0.012, 0.35 ± 0.002) from 500 to 3,000 cd/㎡. The white tandem OLED using SH-1 : BD-2 (3 vol.% 12 nm) /CBP : Ir(mphmq)2(acac) (2 vol.% 18 nm) showed maximum efficiency of 19.6 cd/A, CIE coordinates of (0.354,0.365) at 1,000 cd/㎡, and variation of CIE coordinates with (0.356 ± 0.016, 0.364 ± 0.002) from 500 to 3,000 cd/㎡. Maximum current efficiency of the white tandem OLED was more twice as high as the single OLED. Our findings suggest that tandem OLED was possible to produce improved efficiency and excellent color stability.

To study emission properties of white phosphorescent organic light emitting devices (PHOLEDs), we fabricated white PHOLEDs of ITO (150 nm) / NPB(30 nm) / TcTa(10 nm) / mCP(7.5 nm) / light-emitting layer(25 nm) / UGH3(5 nm) / Bphen(50 nm) / LiF(0.5nm) / Al(200 NM) structure. The total thickness of light-emitting layer with co-doping and blue-doping/ co-doping using a host-dopant system was 25 nm and the dopant of blue and red was FIrpic and Bt2Ir(acac) in UGH3 as host. respectively. The OLED characteristics were changed with position and thickness of doping layer and co-doping layer as light-emitting layer and the best performance seemed in structure of blue-doping(5 nm)/co-doping(20 nm) later. The white PHOLEDs showed the maximum current density of 34.5 mA /cm², maximum brightness of 5,731 cd/ m², maximum current efficiency of 34.8 cd/A, maximum power efficiency of 21.6lm/w, maximum quantum effiency of 15.6%, and a Commission International de L`Eclairage (CIE) coordinate of (0.367, 0.436) at 1,000 cd/m².

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% Bt2Ir(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% Bt2Ir(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 cd/㎡, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 cd/㎡, respectively.

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue, blue/red and red/blue/red emitting layer (EML) structures were fabricated using a host-dopant system. In case of white PHOLEDs with red/blue structure, the best efficiency was obtained at a structure of red (15 nm)/blue (15 nm). But the emission color was blue-shifted white. In case of white PHOLEDs with blue/red structure, the better color purity and efficiency were observed at a blue (29 nm)/red (1 nm) structure. For additional improvement of color purity in white PHOLEDs with blue (29 nm)/red (1 nm) EMLs, we fabricated white PHOLEDs with red (1 nm)/blue (28 nm)/red (1 nm) structure. The current efficiency, external quantum efficiency, and CIE (x, y) coordinate were 27.2cd/A, 15.1%, and (0.382, 0.369) at 1,000cd/㎡, respectively.