In this paper, for the application of ultrasonic cleaners for cleaning dentures and transparent braces, Pb(Mn_1/3Nb_2/3)O₃-Pb(Ni_1/3 Nb_2/3)O₃-Pb(Zr,Ti)O₃ [PMN-PNN-PZT] system ceramics were manufactured and their dielectric and piezoelectric properties were investigated. Overall the best properties suitable for the device applications such as ultrasonic cleaner were obtained from the ceramics sintered at 920℃: bulk density of 7.8 g/㎤, the dielectric constant (ε_r) of 1,689, piezoelectric charge constant (d₃₃) of 433 pC/N, planar electromechanical coupling factor (k_p) of 0.64, mechanical quality factor (Qm) of 835, S₁₁^E of 13.37 (10^-12 N/㎡), and Curie temperature of 315℃ By using the physical properties of this composition, the ultrasonic cleaner was designed and simulated using the commercial ATILA software. For the three-layered ceramics with the dimension of 25 mm × 25 mm × 2.5mm, an excellent displacement of 8.998 ×10^-3 m) and the sound pressure of 147.68 dB were recorded.

Ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) films were deposited on SrTiO₃(100) substrate by using conductive SrRuO₃ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic SrRuO₃ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization (P_r) of 29.0 μC/cm² and coercive field (E_c) of 83 kV/cm, and P_r decreased and E_c increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of Pb(ZrTi)O3 (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of 400 ㎛ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing O2 mixing ratio. At about 25% O2 mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than 600℃, the PZT thin films become a perovskite phase. At the annealing temperature of 700℃, perovskite PZT thin films with good quality structure was obtained.