This review examines the use of halide perovskite materials in electronic devices, highlighting their exceptional optoelectronic properties and the challenges associated with them. Despite their potential for high-performance devices, practical applications are limited by sensitivity to environmental factors such as moisture and oxygen, etc. We discuss advances in enhancing stability and operational reliability, featuring innovative synthesis methods and device engineering strategies that help mitigate degradation. Furthermore, we explore the integration of perovskites in applications such as field-effect transistors and LEDs, emphasizing their transformative potential. This review also outlines future research directions, stressing the need for ongoing improvements in material stability and device integration to fully realize the commercial potential of perovskites.

Perovskite materials are promising candidates for next-generation optoelectronic devices owing to their outstanding external quantum efficiency, high color purity, and ability to tune the light emission wavelength. However, conventional thermal annealing processes caused the degradation of perovskite, resulting in poor optoelectronic properties and a short lifetime. Herein, we propose a laser-induced recrystallization of perovskite thin film to enhance its light-emitting properties. Laser-induced recrystallization process was performed using rapid and instantaneous laser heating, which successfully induced grain growth of the perovskite material. The laser processing conditions were thoroughly optimized based on theoretical calculations and various material analyses such as x-ray diffraction, scanning electron microscope, and photoluminescence spectroscopy.

Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites