SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at 400℃ using SiH₄ or SiCl₄ and GeCl₄ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using SiCl₄ and SiH₄ source were comparatively studied. SiGe films deposited using SiCl₄ source showed a lower growth rate and higher crystallinity than those deposited using SiH4 source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

TeO_x thin films were deposited at various O₂/Ar gas-flow ratios by a reactive RFmagneton sputtering technique from TeO₂ and Te targets. X-ray diffraction (XRD) results revealed that the TeO_x thin films were amorphous. The structure and chemical composition of the TeO_x thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the TeO_x thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the O₂/Ar gas-flow ratios, the atomic composition ratio of TeO_x thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing O₂/Ar gas-flow ratio, the refractive index of the TeO_x thin films decreased and the optical bandgap of the films increased.

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300∼800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.