Memristors, as next-generation memory devices, have garnered significant academic interest. Among them, TiO₂/TiO_2-x based memristors have particularly attracted substantial scholarly attention. Research on the activation and stability of TiO2 based memristor devices through process parameters is essential. Here, to determine the impact of process parameters on the activation of TiO₂/TiO_2-x based memristor devices, we fabricated the memristor devices using a sputtering system andconducted annealing at 400℃. Additionally, to analyze the electrical characteristics of the devices, we measured the I-V curves and C-V curves. Also, we examined TiO₂/TiO_2-x based memristor devices surface using SEM. Consequently, it was observed that the devices subjected to annealing exhibited improved hysteresis curves in the I-V characteristics, a reduced bandgap, and changes in resistance compared to the non-annealed devices. The retention test results further demonstrated that the set/reset characteristics of the devices were stable, confirming their potential applicability as memory devices.