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"O2 gas"

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"O2 gas"

Nano Materials and Devices : Investigation on Growth Characteristic of ZnO Nanostructure with Various O2 Pressures by Thermal Evaporation Process
Kyoung Bum Kim, Yong Ho Jang, Chang Il Kim, Young Hun Jeong, Young Jin Lee, Jeong Ho Jo, Jong Hoo Paik, Sahn Nahm
J Electr Electron Mater 2011;24(10):839-843.   Published online October 1, 2011
ZnO nanostructures were developed on a Si (100) substrate from powder mixture of ZnO and 5 mol% Pd (ZP-5) as reactants by × sccm oxygen pressures(x= 0, 10, 20, 40). DTA (differential thermal analysis) result shows the Pd(5 mol%)+ZnO mixtured powder(PZ-5) is easily evaporated than pure ZnO powder. The PZ-5 mixtured powder was characterized by DTA to determine the thermal decomposition which was found to be at 800℃, 1,100℃. Weight loss(%) and ICP (inductively coupled plasma) analysis reveal that Zn vaporization is decreased by increased oxygen pressures from the PZ-5 at 1,100℃ for 30 mins. Needle-like ZnO nanostructures array developed from 10 sccm oxygen pressure, was well aligned vertically on the Si substrate at 1,100℃ for 30 mins. The lengths of the Needle-like ZnO nanostructures is about 2 μm with diameters of about 65 nm. The developed ZnO nanostructures exhibited growth direction along [001] with defect-free high crystallinity. It is considered that Zn vaporization is responsible for the growth of Needle-like ZnO nanostructures by controlling the oxygen pressures. The photoluminescence spectra of ZnO nanostructures exhibited stronger 376.7 nm NBE (near band-edge emission) peak and 529.3 nm DLE (deep level energy) peak.
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Dry Etching of Polysilicon in HBr/O2 Inductively Coupled Plasmas
Seong Jin Beom, O Seong Song, Hye Seong Lee, Jong Jun Kim
J Electr Electron Mater 2004;17(1):1-6.   Published online January 1, 2004
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NO2 Gas Sensor Utilizing Pt-WO3-SiO2-Si-Al Capacitor
J Electr Electron Mater 1999;12(4):333-339.   Published online April 1, 1999
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