This study examined the size and shape of the nano-silver particle through the analysis of electrical resistance when synthesizing nano-sized silver by using the chemical liquid reduction. Changes in particle behaviors formed according to the changes in electronic characteristics by electric resistance in each time period in the beginning of reduction reaction in a course of synthesizing the nano-silver particle formation were studied. In addition, analysis was conducted on particle behaviors according to the changes in concentration of AgNO3 and in temperature at the time of reduction and nucleation and growth course when synthesizing the particles based on the particle behaviors were also examined. As the concentration of AgNO3 increased, the same amount of resistance of approximately 5 Ω was increased in terms of initial electronic resistance. Furthermore, according to the result of formation of nuclear growth graph and estimation of slope based on estimated resistance, slops of 6.25×10-3, 2.89×10-3, and 1.85×10-3 were derived from the concentrations of 0.01 M, 0.05 M, and 0.1 M, respectively. As the concentration of AgNO3 increased, the more it was dominantly influenced by the nuclear growth areas in the initial phase of reduction leading to increase the size and cohesion of particles. At the time of reduction of nano-silver particle, the increases of initial resistance were 4 Ω, 4.2 Ω, 5 Ω, and 5.3 Ω, respectively as the temperature increased. As the temperature was increased into 23℃, 40℃, 60℃, and 80℃, slopes were formed as 4.54×10-3, 4.65×10-3, 5.13×10-3, and 5.42×10-3 respectively. As the temperature increased, the particles became minute due to the increase of nuclear growth area in the particle in initial period of reduction.

Heteroepitaxial InP films have been grown on GaAs substrates to study the effects of the nucleation layer`s surface roughness on the epitaxial layer`s quality. For this, InP nucleation layers were grown at 400℃ with various ethyldimethylindium (EDMIn) flow rates and durations of growth, annealed at 620℃ for 10 minutes and then InP epitaxial layers were grown at 550℃. It has been found that the nucleation layer`s surface roughness is a critical factor on the epitaxial layer`s quality. When a nucleation layer is grown with an EDMIn flow rate of 2.3 μmole/min for 12 minutes, the surface roughness of the nucleation layer is minimum and the successively grown epitaxial layer`s qualities are comparable to those of the homoepitaxial InP layers reported. The minimum full width at half maximum of InP (200) x-ray diffraction peak and that of near-band-edge peak from a 4.4 K photoluminescence are 60 arcmin and 6.33 meV, respectively.

Amorphous Si (a-Si) thin films of p+/p-/n+ were deposited on Si3N4/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of 600℃/18 h in conventional furnace. The open-circuit voltages (Voc) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of 680℃. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.