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"Non-punch through"

A Study on Optimal Design and Electrical Characteristics of 600 V Planar Field Stop IGBT
Tae Jin Nam, Eun Sik Jung, Ey Goo Kang
J Korean Inst Electr Electron Mater Eng 2012;25(4):261-265.   Published online April 1, 2012
DOI: https://doi.org/10.4313/JKEM.2012.25.4.261
IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.
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