In this study, we proposed β-Ga₂O₃ JFET using nitrogen doping and analyzed the electrical characteristics. In β-Ga₂O₃, nitrogen ions act as a deep acceptor and are used to implement the current blocking layer. By using this characteristic of the nitrogen ion, in the proposed JFET, nitrogen ions are used to obtain gate control and pinch off the channel of the JFET. The numerical TCAD simulation was performed to design and analyze the proposed JFET. The simulated forward and reverse characteristics of the proposed JFET were obtained as a function of JFET width and nitrogen doping concentration. The maximum breakdown voltage of 1.7 kV was obtained with the on-resistance of 16.7 mΩ·cm² when the channel width was 1.5 μm and nitrogen doping concentration is 1×1018/cm³, respectively.

Nitrogen-doped graphene was synthesized by a hydrothermal method using graphene oxide (GO) as the raw material, urea as the reducing agent and nitrogen as the dopant. The morphology, structure, composition and electrochemical properties of the samples are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), nitrogen adsorptiondesorption analysis, electrical conductivity and electrochemical tests. The results show that urea can effectively reduce GO and achieve nitrogen doping under the hydrothermal conditions. By adjusting the mass ratio of raw materials to dopants, the graphene with different nitrogen doping contents can be obtained; the nitrogen content range is from 5.28~6.08% (atomic fraction percentage).When the ratio of dopant to urea is 1:30, the nitrogen doping content reaches a maximum of 6.08%.The supercapacitor performance test shows that the nitrogen content prepared by the ratio of 6.08% is the best at 0.1 A·g^-1. The specific capacitance is 95.2 F·g^-1.