Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.

Citations

• Improvement in negative bias illumination stress stability of In–Ga–Zn–O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions
  So-Yeong Na, Yeo-Myeong Kim, Da-Jeong Yoon, Sung-Min Yoon
  Journal of Physics D: Applied Physics.2017; 50(49): 495109.     CrossRef