The electrical characteristics of single-crystal composite superconductors produced by a melting process were studied by neutron irradiation. In order to improve the current characteristics of the YBa₂Cu₃O_7-y superconductor, it is necessary to form an effective flux pinning center inside the superconductor. In this study, an increase in flux pinning was attempted through neutron irradiation onto YBa₂Cu₃O_7-y superconductors. The neutron irradiation was performed at 30 MeV for 500 sec, The electrical properties of the superconductors were measured in a magnetic field of 5 Tesla at 50 K using a magnetic properties measurement system (MPMS). After neutron irradiation, the critical current density of the YBa₂Cu₃O_7-y superconductor in a 1 Tesla magnetic field was 1×10⁵ A/㎠. Once neutrons were irradiated at 30 MeV and 10 μA for 500 sec, the critical current density was observed to increase significantly. When neutrons are irradiated to a superconductor, micro-defects are created in the superconductor, and they act as flux pinning centers that hold the magnetic field generated when an electric current flows.

In this work, we have investigated the effect of a 30-min thermal anneal at 550℃ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

The temperature dependent characteristics on the properties of SiC Schottky Diode has beeninvestigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottkydiode were measured in the range of 300 ∼ 500 K. Divided into pre- and post- irradiated device wasmeasured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, thebarrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier heightafter irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottkydiode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottkydiode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzedthe effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was 3.1×1010n/cm2. The current density after irradiation decreased from 12.7 to 0.75 A/cm2. Also, a slight positive shift (ΔVth= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (ΔΦB= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

We have proposed a new configuration on the cathode structure to improve a neutron yield without the application of external ion sources in an inertial electrostatic confinement (IEC) device. A neutron yield in the IEC device is closely related to the potential well structure generated inside the cathode and is proportional to the ion current. Therefore, the application of a double grid cathode structure to the IEC device is expected to produce a higher ion current and neutron yield than at a single grid cathode due to a high electric field strength generated around the cathode. These possibilities were verified as compared with the ion current calculated from both shape of the single and double grid cathode. Additionally from the results of ion`s lives and trajectories examined at various outer cathode voltages and grid cathode configurations by using particle simulations, the validity of the double grid cathode was confirmed.