The composite specimens of (1-x)(La_0.7Sr_0.3)MnO₃-xBaTiO₃ (x = 0.05 ~ 0.3) were synthesized using the conventional solid-state reaction method, and the sintering temperature and time were 1,300℃ and 3 hours, respectively. As a result of observing the structural characteristics, the crystal structure of LSMO-BT solid solution was shown in which the rhombohedral LSMO phase and the tetragonal BT phase were separated and distributed, respectively. And fine grains having relatively small and uniformly distributed grains with sizes ranging from approximately 0.4 to 0.5 μm and pores within the specimens were observed. Notably, variations in the BT content did not significantly affect the grain size or porosity distribution, and a relative density of about 90% or more was shown. The resistivity, temperature coefficient of resistance (TCR), and B_25/65-value of the 0.7LSMO-0.3BT specimen at room temperature showed the highest values of 1.94 Ω-cm, 0.292 %/℃, and 464 K, respectively. The resistivity behavior of the LSMO-BT composites matched well with the small polaron hopping conduction model.

Piezoelectric materials, which convert mechanical energy into electrical signals, are widely used in various industrial applications such as sensors, actuators, and energy harvesting devices. This study aims to enhance the performance of Pb(Mg_1/3Nb_2/3)O₃-Pb(Al_1/2Nb_1/2)O₃-Pb(Zr_0.52Ti_0.48)O₃ (PMN-PAN-PZT) piezoelectric ceramics by investigating the effects of varying PAN and PMN content and adding Nb₂O₅ on their piezoelectric properties. The results show that with 2 mol% of PMN and PAN, the morphotropic phase boundary (MPB) region exhibits the highest piezoelectric properties. Additionally, excess Nb₂O₅ positively influenced the piezoelectric properties, maximizing electro-mechanical coupling factor (k_p=63%, d₃₃=440 pC/N). These findings contribute to developing next-generation high-performance piezoelectric materials, with potential for improved efficiency and performance in various industries.

With the recent active development of laser-based weapons/monitoring/communication systems, there is a significant increase in the demand for improved performance of piezoelectric actuators, a key component of both deformable mirror (DM) and fast steering mirror (FSM) in the systems. The conventional polycrystalline piezoelectric ceramic actuators have limitations in improving their characteristics, so the ultrahigh strain PMN-PZT piezoelectric single crystal multilayer actuators have been developed. In this study, the basic experimental methods were developed to evaluate their stability as well as reliability. The limitations of deformation and applied voltage were confirmed through the breakdown voltage test, and the degree of stability was confirmed through the hammering test. In this study, the breakdown voltage test and the hammering test were confirmed to be effective methods to evaluate their stability as well as reliability. Through these studies, the next-generation PMN-PZT piezoelectric single-crystal multilayer actuator is expected to be applied to various piezoelectric application fields by securing reliability as well as excellent piezoelectric properties.

Physically Unclonable Functions (PUFs) provide a high level of security for private keys using unique physical characteristics of hardware. However, fabricating PUF chips requires numerous semiconductor processes, leading to high costs, which limits their applications. In this work, we introduce a low-cost manufacturing method for PUF security chips. First, surface roughening through wet-etching is utilized to create random variables. Additionally, physical vapor deposition is added to further enhance randomness. After PUF chip fabrication, both Hamming distance (HD) and Hamming weight (HW) are extracted and compared to verify the fabricated chip. It is confirmed that the PUF chip using two different multiple process variables demonstrates superior uniqueness and uniformity compared to the PUF security chip fabricated using only a single process variable.

Mn-doped Pb(In_1/2Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (Mn:PIN-PMN-PT) single crystals, which exhibit improved phase transition temperatures and coercive field properties compared to Pb(In_1/2 Nb_1/2)O₃-Pb(Mg_2/3Nb_1/3)O₃-PbTiO₃ (PIN-PMNPT) single crystals, are expected to be utilized in high-power acoustic transducers. Bridgeman method, growing single crystals along the axial direction from melt, is most widely used method for single crystal growth with large size and high quality. However, single crystal boules grown by the Bridgeman method demonstrate a PT compositional variation, giving rise a distribution of crystal structure and material properties along the growing axis. To employ piezoelectric single crystals grown by the Bridgeman method for acoustic transducers, it is essential to investigate their overall property distribution. In this study, the compositional distribution and property variation of Mn:PIN-PMN-PT single crystals grown by the Bridgeman method was investigated. Measured compositional distribution of PT was from 29% to 32.5% in the Rhombohedral crystal region of the boule. Two types of specimen, [011]-poled Mn:PIN-PMN-29PT and Mn:PIN-PMN-32PT single crystals, were fabricated and tested to obtain full property variation at both ends of the Rhombohedral crystal region. The properties related to the 32 directional vibration mode and the properties related to high-power driving were measured to confirm the overall distribution of properties by composition.

(La0.7Sr0.3)(Mn1-xFex)O3 (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO2/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B25/65-value increased. Electrical resistivity, TCR and B25/65-value of the (La0.7Sr0.3)(Mn0.88Fe0.12)O3 thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott’s VRH model.

Multilayered actuators using Pb(Mg_1/3Nb_2/3)O₃-Pb(In_1/2Nb_1/2)O₃-PbTiO₃ (PMN-PIN-PT) crystals have demonstrated excellent properties, but are costly and lack mechanical strength. Textured PMN-PIN-PT ceramics exhibit robust mechanical strength and comparable properties to their single crystals form. However, the development of multilayered actuators using textured PMN-PIN-PT ceramics has not been achieved until now. This study presents the development of a multilayered actuator using textured 0.37PMN-0.29PIN-0.34PT ceramics with an Ag0.9/Pd0.1 inner electrode, co-fired at 950℃. A random 0.37PMN- 0.29PIN-0.34PT ceramics multilayered actuator was also developed for comparison. The multilayered actuator consisted of 9 ceramic layers (36 μm thickness) with an overall actuator thickness of 0.401 mm. The textured and random 0.37PMN-0.29PIN- 0.34PT ceramics-based multilayered actuators achieved displacements of 0.61 μm (0.15% strain) and 0.23 μm (0.057% strain) at a low applied peak voltage of 100 V. These results suggest that the developed multilayered actuator using high-performance textured 0.37PMN-0.29PIN-0.34PT ceramics has the potential to replace expensive single crystal-based actuators costeffectively.

La_0.7-xCe_xSr_0.3MnO₃ specimens were fabricated by a solid state reaction method and structural and electrical properties with variation of Ce4+ contents were measured. All specimens exhibited a polycrystalline rhombohedral crystal structure, and the (110) peaks were shifted to low angle side with increasing the amount of Ce⁴⁺ contents. As Ce⁴⁺ ions with different ion radii and charges are substituted with La³⁺ ions, electrical properties are thought to be affected by changes in the double exchange interaction between Mn³⁺-Mn⁴⁺ ions due to distortion of the unit lattice, a decrease in oxygen vacancy concentration, and an increase in lattice defects. Resistivity gradually decrease as the amount of Ce⁴⁺ added increased, and negative temperature coefficient of resistance (NTCR) properties were shown in all specimens. In the La_0.5Ce_0.2Sr_0.3MnO₃ specimens, electrical resistivity, TCR and B-value were 31.8 Ω-cm, 0.55%/℃ and 605 K, respectively.

La_0.7Sr_0.3-xMg_xMnO₃ (LSMMO) (x=0.05~0.20) specimens are fabricated by a solid phase sintering method, and the sintering temperature and time are 1,300℃ and 2 hours, respectively. The dependence of the crystalline structure according to the amount of Mg²⁺ contents is not observed, and all specimens show a polycrystalline rhombohedral crystal structure, the X-ray diffraction (110) peaks move to the high angle side with increasing the amount of Mg²⁺ contents. LSMMO specimens exhibit a granule-shaped microstructure with an average grain size of 1 μm or less. Resistivity gradually decrease as the amount of Mg²⁺ contents increased. And in the La_0.7Sr_0.1Mg_0.2MnO₃ specimen, resistivity and B_25/65-value are 36.7 Ω-cm and 394 K at room temperature, respectively. LSMMO specimens show a variable-range hopping (VRH) electrical conduction mechanism, and the negative temperature of coefficient of resistance (NTCR) is approximately 0.37~0.38%/℃.

In this paper, for the application of ultrasonic cleaners for cleaning dentures and transparent braces, Pb(Mn_1/3Nb_2/3)O₃-Pb(Ni_1/3 Nb_2/3)O₃-Pb(Zr,Ti)O₃ [PMN-PNN-PZT] system ceramics were manufactured and their dielectric and piezoelectric properties were investigated. Overall the best properties suitable for the device applications such as ultrasonic cleaner were obtained from the ceramics sintered at 920℃: bulk density of 7.8 g/㎤, the dielectric constant (ε_r) of 1,689, piezoelectric charge constant (d₃₃) of 433 pC/N, planar electromechanical coupling factor (k_p) of 0.64, mechanical quality factor (Qm) of 835, S₁₁^E of 13.37 (10^-12 N/㎡), and Curie temperature of 315℃ By using the physical properties of this composition, the ultrasonic cleaner was designed and simulated using the commercial ATILA software. For the three-layered ceramics with the dimension of 25 mm × 25 mm × 2.5mm, an excellent displacement of 8.998 ×10^-3 m) and the sound pressure of 147.68 dB were recorded.

La_0.7Sr_0.3MnO₃ precursor solution were prepared by a sol-gel method. La_0.7Sr_0.3MnO₃ thin films were fabricated by a spin-coating method on a Pt/Ti/SiO₂/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La_0.7Sr_0.3MnO₃ thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩㆍcm, 0.316%/℃, 296 K and 0.023 eV, respectively.

(La_0.5Nd_0.2Sr_0.3)MnO₃ specimens were prepared by a solid-state reaction. In all specimens, X-ray diffraction patterns of an orthorhombic structure were shown. The fracture surfaces of (La_0.5Nd_0.2Sr_0.3)MnO₃ specimens showed a transgranular fracture pattern be possibly due to La ions (0.122 nm) as a perovskite A-site dopant substituting for Nd ions (0.115 nm) having a small ionic radius. The full-width at half maximum (FWHM) of the Mn 2p XPS spectra showed a value greater than that [8] of the single valence state, which is believed to be due to the overlapping of Mn²⁺, Mn³⁺, and Mn⁴⁺ ions. The dependence of Mn 2p spectra on the Mn³⁺/Mn⁴⁺ ratio according to sintering time was not observed. Electrical resistivity resulted in the minimum value of 100.7 Ω-cm for the specimen sintered for 9 hours. All specimens show a typical negative temperature coefficient of resistance (NTCR) characteristics. In the 9-hour sintered specimen, TCR, activation energy, and B25/65-value were -1.24%/℃, 0.19 eV, and 2,445 K, respectively.

All-solid-state thin-film battery can realize the integration of electronic circuits into small devices. However, a high voltage cathode material is required to compensate for the low energy density. Therefore, it is necessary to study all-solid-state thin-film battery based on the high voltage cathode material LNMO. Nevertheless, the electrochemical properties deteriorate due to the problem of the interface between LiNi_0.5Mn_1.5O₄ (LNMO) and the solid electrolyte LiPON. In this study, to solve this problem, amorphous V₂O₅ was deposited as an interlayer between LNMO and LiPON. We confirmed the possibility of improving cycle performance of LNMO based thin-film battery. We expect that the results of this study can extend the battery lifespan of small devices using LNMO based all-solid-state thin-film battery.

[011] poled ternary Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PIN-PMN-PT) single crystals have been investigated for active materials for acoustic transducers because of their high piezoelectric properties in both shear and transverse modes. In order to use [011] poled PIN-PMN-PT single crystals for acoustic transducers, the characterization of full-matrix material properties is required. In this study, full sets of compliance, dielectric, and piezoelectric constants of [011] poled rhombohedral PIN-PMN-PT were measured by a resonance method. Dimensions and geometries of 12 samples were proposed for measuring 17 independent material constants of [011] poled rhombohedral PIN-PMN-PT single crystals. Two sets of samples with different PT concentrations, 0.24PIN-0.49PMN-0.27PT and 0.24PIN-0.46PMN-0.30PT, were fabricated and their material properties were measured. Measured impedance spectra and simulated impedance spectra of the samples were compared to check the accuracy of the measurements.

All-solid-state thin-film lithium-ion batteries are important in the development of next-generation energy storage devices with high energy density. However, thin-film batteries have many challenges in their manufacturing procedure. This is because there are many factors, such as substrate selection, to consider when producing the thin film multilayer structure. In this study, we compare the fabrication and performance of all-solid-state thin-film lithium-ion batteries with a LiNi_0.5Mn_1.5O₄ cathode/LiPON solid electrolyte/ Li₄Ti₅O₁₂ anode structure using stainless steel and Si substrates with different surface roughness. We demonstrate that the smoother the surface of the substrate, the thinner the thickness of the all-solid-state thin-film lithium-ion battery that can be made, and as a result, the corresponding electrochemical characteristics can be improved.

This study introduces a new investigation report on the microstructural and electrical property changes of ZnO-Zn₂BiVO₆-Mn₃O₄ (ZZMn), where 0.33 mol% of Mn₃O₄ and 0.5 mol% of Zn₂BiVO₆ were added to ZnO (99.17 mol%) as liquid phase sintering aids. Zn₂BiVO₆ contributes to the decrease of sintering temperatures by up to 800℃, and segregates its particles at the grain boundary, while Mn₃O₄ enhances α, the nonlinear coefficient, of varistor properties up to α＝62. In comparison, when the sintering temperature is increased from 800℃ to 1,000℃, the resistivity of ZnO grains decreases from 0.34 Ωcm to 0.16 Ωcm, and the varistor property degrades. Oxygen vacancy (V_o^·) (P1, 0.33~0.36 eV) is formed as a dominant defect. Two different kinds of grain boundary activation energies of P2 (0.51~0.70 eV) and P3 (0.70~0.93 eV) are formed according to different sintering temperatures, which are tentatively attributed to be ZnO/Zn₂BiVO₆-rich interface and ZnO/ZnO interface, respectively. Accordingly, this study introduces a progressive method of manufacturing ZnO chip varistors by way of sintering ZZMn-based varistor under 900℃. However, to procure a higher reliability, an in-depth study on the multi-component varistors with double-layer grain boundaries should be executed.

Pb(Mn_1/3Nb_2/3)_0.07(Ni_1/3Nb_2/3)_0.10(Zr_0.5Ti_0.5)_0.83O₃ composition ceramics with high piezoelectric properties were fabricated by the columbite precursor method for ultrasonic generators, and the effects of sintering temperature on microstructure and piezoelectric properties were systematically investigated. It was found that the tetragonality of the ceramics decreased with increase in sintering temperature. Moreover, excellent physical properties such as d₃₃=447 pC/N, ε_r=1,843, k_p=0.641, and Q_m=1,207 were obtained for an ultrasonic generator when the second calcination temperature and sintering temperature were 720℃ and 920℃, respectively.

In this study, Li₂MnSiO₄ cathode material and LiPON solid electrolyte were manufactured into thin films, and the possibility of their use in thin-film batteries was researched. When the RTP treatment was performed after Li₂MnSiO₄ cathode thin-film deposition on the SUS substrate by a sputtering method, a β-Li₂MnSiO₄ cathode thin film was successfully manufactured. The LiPON solid electrolyte was prepared by a reactive sputtering method using a Li₃PO₄ target and N₂ gas, and a homogeneous and flat thin film was deposited on a Li₂MnSiO₄ cathode thin film. In order to evaluate the electrochemical properties of the Li₂MnSiO₄ cathode thin films, coin cells using only a liquid electrolyte were prepared and the charge/discharge test was conducted. As a result, the amorphous thin film of RTP treated at 600℃ showed the highest initial discharge capacity of about 60 μAh/㎠. In cases of coin cells using liquid/solid double electrolyte, the discharge capacities of the Li₂MnSiO₄ cathode thin films were comparable to those without solid LiPON electrolyte. It was revealed that Li₂MnSiO₄ cathode thin films with LiPON solid electrolyte were applicable in thin film batteries.

In this paper, we investigated the effect of Co content on the microstructural and electrical properties of Ni_0.79Mn_2.21-xCo_xO₄ (x=0 to 0.25) specimens. Solid-state reaction was used to prepare the bulk specimens. XRD (X-ray diffraction) patterns showed that all compositions had a cubic spinel phase. As a result of the microstructural properties, FE-SEM(field-emission scanning electron microscopy) analysis showed a dense structure, and the mean grain size increased from 5.24 μm to 7.33 μm with an increase of Co content from x=0 to 0.25. All specimens exhibited the typical NTC thermistor characteristics as the electrical resistance exponentially decreased with increasing temperature. The resistivity and the B-value of Ni_0.79Mn_1.96Co_0.25O₄ were 2959 Ω·cm and 3719, respectively.

In this paper, Pb(Mn_1/3Nb_2/3)_0.07(Ni_1/3Nb_2/3)_0.10(Zr_0.5Ti_0.5)_0.83O₃ ceramics were fabricated by the conventional solid state method to obtain excellent dielectric properties for ultrasonic generators. The effects of 2nd calcination temperature on their microstructure and piezoelectric properties were systematically investigated. The tetragonality increased in the ceramics when 2nd calcination temperature increased to the optimized temperature at 750℃. At that temperature, excellent physical properties (d₃₃= 352 pC/N, ε_r= 1,687, k_p= 0.570, Q_m= 1,640) were obtained for ultrasonic generator application.

In this study, the physical and optical properties of ZnS:Mn2+ Quantum Dot prepared by wet-process condition with Mn/Zn ratio was valuated. The powder characteristics and optical behavior were investigated through XRD, TEM and Photo spectrometer exicted by various UV light source. We found the main peak of ZnS (111) was shifted by 0.8 degree to low angle position with increasing stirring energy from 200 RPM to 600 RPM, which is thought to be the increase of lattice defects during wet process. The photo luminescence at 600 RPM shows also higher blue intensity which is well correlated with XRD results. With increasing Mn/Zn ratio, the PL intensity become higher and shifed by 8.5nm to right side, by the increment of substitutional Mn²⁺ ions.

In this study, ZnxMn_3-xO₄ (x=0.95~1.20) specimens were prepared by using a conventional mixed oxide method. All specimens were sintered in air at 1,200℃ for 12 h and cooled at a rate of 2℃/min to 800℃, subsequently quenching to room temperature. We investigated the structural and electrical properties of Zn_xMn_3-xO₄ specimens with variation of ZnO amount for the application of NTC thermistors. As results of X-ray diffraction patterns, all specimens showed the formation of a complete solid solution with tetragonal spinel phase. And, the second phase was observed by the solubility limit of Zn ions in x≥1.10 composition. The average grain size was increased from 2.72 μm to 4.18 μm with increasing the compositional ratio of Zn ion from x=0.95 to 1.20, respectively. Zn_1.10 Mn_1.90 O₄ specimen showed the minimum electrical resistance of 57.5 kΩ at room temperature and activation energy of 0.392 eV.

Convectional PZT based piezoelectric ceramics have to sinter at high temperature about 1,200℃ for their suitable electrical properties. However, some issues: low temperature sintering piezoelectric ceramic composition and reliable internal electrode, have recently attracted a great deal of interest as a highly efficient multi-layered piezoelectric ceramics. In order to optimize low temperature sintering conditions of thick-film PMN-PZ-PT ceramic, it was investigated sintering and piezoelectric properties according to the change of LiBiO₂contents. Thus, the superior piezoelectric properties were found at the pallet type PMN-PZ-PT optimized with low sintering processing at 925℃ including 7 wt% LiBiO₂sintering aid. Consequentially, we successfully manufactured thick-film PMN-PZ-PT ceramics, which had superior piezoelectric and dielectric properties, with 5 wt% of LiBiO₂sintering aid at temperature of 900℃.

In this study, Ni0.79(Mn2.21-χCuχ)O4 (x=0~0.25) specimens were prepared by using a conventional mixed oxide method. All specimens were sintered in air at 1,℃ for 12 h and cooled at a rate of 2℃/min to 800℃, subsequently quenching to room temperature. We investigated the structural and electrical properties of Ni 0.79(Mn2,21-χCuχ)O4 specimens with variation of CuO amount for the application of NTC thermistors. As results of X-ray diffraction patterns, all specimens showed the formation of a complete solid solution with cubic spinel phase. The relationship between ln ρ and the reciprocal of absolute temperature(1/T) for the NTC thermistors was shown linearity, which exhibited the typical NTC thermistor properties. With increasing the amount of CuO, resistivity at room temperature, B-value, and temperature coefficient resistance decreased.

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below 10 mΩ and low temperature coefficient of resistance (TCR) below 100 ppm/℃ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.

In this work, LiMn2O4 and LiNi1/3Mn1/3Co1/3O2 cathode materials are mixed by some specific ratios to enhance the practical capacity, energy density and cycle performance of battery. At present, the most used cathode material in lithium ion batteries for EVs is spinel structure-type LiMn2O4. LiMn2O4 has advantages of high average voltage, excellent safety, environmental friendliness, and low cost. However, due to the low rechargeable capacity (120 mAh/g), it can not meet the requirement of high energy density for the EVs, resulting in limiting its development. The battery of LiMn2O4-LiNi1/3Mn1/3Co1/3O2 (50:50 wt%) mixed cathode delivers a energy density of 483.5 mWh/g at a current rate of 1.0 C. The accumulated capacity from 1st to 150th cycles was 18.1 Ah/g when the battery is cycled at a current rate of 1.0 C in voltage range of 3.2~4.3 V.

In this paper, the growing orientation of PMN-PT single crystal is analyzed using the Laue-Back Reflection Method. Two kinds of PMN-PT single crystals are grown using the Bridgman growing method in the [001] and [111] directions and their the Laue photographs are simulated assuming cubic crystal systems. From the comparison between simulation and test results, it can be concluded that the single crystals are grown in the desired crystal orientations.

In this study, (1-x)Pb(Mg1/2W1/2)0.03(Ni1/3Nb2/3)0.09(Zr0.5Ti0.5)0.88O3 + xCeMnO3 (x= 0∼0.02) ceramics were prepared by Columbite precursor method. The phase structure, ferroelectric and piezoelectric properties were systematically investigated. It was found that PMW-PNN-PZT possessed superior electrical properties due to its composition close to the MPB (morphotropic phase boundary). Coercive electric field of 10.05 [kV/cm] and density of 7.88 [g/cm3] were obtained when the substitution amount of CeMnO3 is x=0.02. In contrast, specimens with x=0.01 showed the mechanical quality factor(Qm) of 1,091 and the electromechanical coupling factor(kp) of 0.613.

ZnO crystals with different morphologies were synthesized through a thermal evaporation of Zn-Mn mixtures in air. The morphology was dependant on the Mn content in Zn-Mn mixture. The morphology was changed from rod to tetrapod shape with decreasing Mn content in Zn-Mn mixture. There sult indicates that the concentration of Mn might be responsible for the different morphologies of ZnOcrystals. XRD spectra showed that the ZnO crystals had a hexagonal wurtzite crystal strutures. For all the samples, room temperature cathodoluminescence spectra showed a ultra-violet emission at 380 nm and a green emission at around 500 nm. However, the intensity ratio of ultra-violet emission to green emission was significantly different with the Mn content in the source material.

MnO2-doped 0.985[Li0.04(Na0.545K0.46)0.96(Nb0.81Ta0.15Sb0.04)]O3+0.015KNbO3(0.985LNKNTS+0.015KNbO3)lead-free ceramics were fabricated by conventional solid state method to develop excellent dielectric andpiezoelectric properties. The result of X-ray diffraction patterns obviously indicated that all of thespecimen has pure perovskite structure without secondary phase. In addition, orthorhombic phase andcoexistance region of orthorhombic-tetragonal phase (MPB) were observed with amount of MnO2. Theoptimal values of ρ=4.70 g/cm3, d33=238 pC/N, kP=0.46, Qm=121, εr=849, and TC=225℃ were obtained at0.01 mol% MnO2 doped 0.985LNKNTS+0.015KNbO3 ceramics sintered at 990℃ for 5 h, respectively. Hence, it was indicated that the suitable amount of MnO2 could improve the electrical properties of0.985[Li0.04(Na0.545K0.46)0.96](Nb0.81Ta0.15Sb0.04)]O3+0.015KNbO3 ceramics.