Post-metallization annealing (PMA) has been employed in silicon-based CMOS fabrication to enhance MOSFET reliability and performance. However, although deuterium annealing can reduce interface traps between the Si and SiO₂ gate dielectric, it remains insufficient to fully passivate these traps. In this context, a multiple PMA process, including additional hydrogen annealing, is proposed to further reduce dangling bonds. Silicon-based MOSFETs are fabricated to verify the proposed annealing process architecture. Electrical characterization of the threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and carrier mobility (μ_n) is conducted to investigate the impact of the multiple PMA. This study provides a guideline for PMA in MOSFET fabrication, with improvements in both performance and reliability.

Non-volatile memory is approaching its fundamental limits with the Si3N4 storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

Fe₂O₃ is one of the most important metal oxides for gas sensing applications because of its low cost and high stability. It is well-known that the shape, size, and phase of Fe₂O₃ have a significant influence on its sensing properties. Many reports are available in the literature on the use of Fe₂O₃-based sensors for detecting gases, such as NO₂, NH₃, H₂S, H₂, and CO. In this paper, we investigated the gas-sensing performance of a Pt-doped ε-phase Fe₂O₃ gas sensor. Pt-doped Fe₂O₃ nanoparticles were synthesized by a Sol-Gel method. Platinum, known as a catalytic material, was used for improving gas-sensing performance in this research. The gas-response measurement at 300℃ showed that Fe₂O₃ gas sensors doped with 3%Pt are selective for NO₂ gas and exhibita maximum response of 21.23%. The gas-sensing properties proved that Fe₂O₃ could be used as a gas sensor for nitrogen dioxide.

NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/SiO2/p-NiO/ITO) provide ultimately fast photoresponses of rising time of 38.33 μs and falling time of 39.25 μs, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.

A high-responsive Schottky device has been achieved by forming a thin metal deposition on aSi substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thicknessabout 10 nm. The barrier height formation between metal and Si determines the rectifying currentprofiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of900 nm. An efficient design of Schottky device may applied for photoelectric devices, includingphotodetectors and solar cells.

In this paper, TCAD assessment of 30 V class n channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described, Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device i.e. higher transconductance (gm), better drain output current (ION), reduced specific on-resistances (R0N) and higher breakdown characteristics (BVDss).