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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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"Level shift"

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"Level shift"

Design of a Charge Pump Circuit Using Level Shifter for LED Driver IC
Won Kyeong Park, Yong Su Park, Han Jung Song
J Korean Inst Electr Electron Mater Eng 2013;26(1):13-17.   Published online January 1, 2013
DOI: https://doi.org/10.4313/JKEM.2013.26.1.13
In this paper, we designed a charge pump circuit using level shifter for LED driver IC. The designed circuit makes the 15 V output voltage from the 5 V input in condition of 50 kHz switching frequency. The prototype chip which include the proposed charge pump circuit and its several internal sub-blocks such as oscillator, level shifter was fabricated using a 0.35 um 20 V BCD process technology. The size of the fabricated prototype chip is 2,350 um × 2,350 um. We examined performances of the fabricated chip and compared its measured results with SPICE simulation data.
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A Gate Drive IC for Power Modules with Shoot-through Immunity
Dae Won Seo, Jun Sik Kim, Shi Hong Park
J Korean Inst Electr Electron Mater Eng 2009;22(7):580-583.   Published online July 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.7.580
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Design of the Driver IC for 500 V Half-bridge Converter using Single Ended Level Shifter with Large Noise Immunity
Hyun Il Park, Ki Nam Song, Yong An Lee, Hyoung Woo Kim, Ki Hyun Kim, Kil Soo Seo, Seok Bung Han
J Korean Inst Electr Electron Mater Eng 2008;21(8):719-726.   Published online August 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.8.719
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