MBB (multi-busbar) technology is a module technology to achieve high power, and the use of a number of thin circular metal wires increases light-receiving capacity and reduces resistance. In the process of interconnection using a wire, the stress of the cell increases depending on the degree of coupling between the wire and the cell and the degree of damage caused by heat, or the mobility of current decreases due to poor bonding. The degree of such loss is affected by IR lamp, hot plate temperature and wire thickness. In addition, the values of contact resistance were compared and analyzed to analyze the cause of the decrease in electrical characteristics. In this study, process condition optimization was carried out through peeling test, SEM analysis, EL test, and pre/post bonding efficiency characteristic analysis of the bonded cell according to process conditions, compared the contact resistance.

Interest and investment in renewable energy have increased worldwide, highlighting the need for renewable energy. Solar energy was the most promising energy of all renewable energy sources, and it has the highest investment value. Because photovoltaics require a certain amount of area for installation, high density and high output performance are required. Shingled module is a promising technology in that they are featured by higher density and higher output compared to the conventional modules. Shingled technology uses a laser scribing to divide solar cells that are to be bonded with electrically conductive adhesive (ECA) to produce and connect strings, which has a higher output in the same area than the conventional modules. In the process of producing solar modules, metal ribbons are used to interconnect cells, but they are also needed for string connections in shingled solar cells. Accordingly, in this study, we researched the interconnection that best suits the connector that joins the string to the string. The module outputs produced under the conditions of the string interconnection were compared and analyzed.

Modified structure of copper pillar bump which has trapezoidal cross section on the top region is suggested with simulation results and concept of fabrication process. Due to the large surface area of joint region between bump and solder in suggested structure, electro-migration effect can be reduced. Reduction of electro-migration is related with current density and joule heating in bump and investigated with finite element methods with variation of dimensional parameters. Mechanical characteristics are also investigated with comparing modified copper pillar bump and conventional copper pillar bump.

Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have 100μm pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with 330℃ and 500 N thermo-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.