This study analyzed the Vulnerability of Network Communication devices when IEMI is coupled with the Network System. An Ultra Wide Band Generator (180 kV, 700 MHz) was used as the IEMI source. The EUTs are the Switch Hub and Workstation, which are used to configure the network system. The network system was monitored through the LAN system configuration, to confirm a malfunction of the network device. The results of the experiment indicate that a malfunction of the network occurs as the electric field increases. The data loss rate increases proportionally with increasing radiating time. In the case of the Switch Hub, the threshold electric field value was 10 kV/m for all conditions used in this experiment. The threshold point causing malfunction was influenced only by the electric field value. The correlation between the threshold point and pulse repetition rate was not found. However, in case of the Workstation, it was found that as the pulse repetition rate increases, the equipment responds weakly and the threshold value decreases. To verify the electrical coupling of the EUT by IEMI, current sensors were used to measure the PCB line inside the EUT and network line coupling current. As a result of the measurement, it can be inferred that when the coupling current due to IEMI exceeds the threshold value, it flows through the internal equipment line, causing a malfunction and subsequent failure. The results of this study can be applied to basic data for equipment protection, and effect analysis of intentional electromagnetic interference.

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.