Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Page Path

5
results for

"Hopping conduction"

Keywords

Publication year

Authors

"Hopping conduction"

Structural and Electrical Properties of (La0.7-xBixSr0.3)FeO₃ Ceramics for Application of Temperature Sensors
Se-ho Kang, Myung-gyu Lee, Sam-haeng Lee, Joo-seok Park, Sung-gap Lee
J Electr Electron Mater 2025;38(6):645-649.   Published online November 1, 2025
DOI: https://doi.org/10.4313/JEEM.2025.38.6.6
(La1-xBixSr0.3)FeO₃ ceramics exhibiting excellent magnetoresistance were synthesized via the conventional solid-state reaction method. The structural and electrical properties were investigated as a function of Bi3+ content to evaluate their potential application as temperature sensors. And the sintering temperature and time were 1,200℃ and 4 h, respectively. The structural and electrical properties were investigated as a function of Bi content. With increasing Bi substitution, a slight enhancement in both average grain size and relative sintered density was observed. In particular, the specimen with x = 0.3 exhibited an average grain size of approximately 0.82 μm. All samples demonstrated negative temperature coefficient of resistance (NTCR) behavior, and the electrical resistivity decreased with increasing Bi content. The resistivity of the (La0.4Bi0.3Sr0.3)FeO₃ composition was 4.68 mΩ-cm at 25°C. Additionally, the temperature coefficient of resistance (TCR) and the B25/75-value, which quantify the sensitivity of resistivity to temperature variations, were found to increase with Bi content. (La0.4Bi0.3Sr0.3)FeO₃ sample exhibited a TCR of 0.43%/°C and a B25/75-value of 1,096 K at room temperature. The electrical conduction mechanism of the (La1-xBixSr0.3)FeO₃ system was well described by the small polaron hopping model, wherein thermally activated charge carriers hop between localized Fe-O-Fe sites via electron-phonon interactions.
  • 13 View
  • 0 Download
Structural and Electrical Properties of (1-x)La0.7Sr0.3MnO₃-xBaTiO₃ Ceramics for Temperature Sensors
Yong-seok Choi, Young-gon Kim, Sung-gap Lee
J Electr Electron Mater 2025;38(4):431-435.   Published online July 1, 2025
DOI: https://doi.org/10.4313/JKEM.2025.38.4.12
The composite specimens of (1-x)(La0.7Sr0.3)MnO₃-xBaTiO₃ (x = 0.05 ~ 0.3) were synthesized using the conventional solid-state reaction method, and the sintering temperature and time were 1,300℃ and 3 hours, respectively. As a result of observing the structural characteristics, the crystal structure of LSMO-BT solid solution was shown in which the rhombohedral LSMO phase and the tetragonal BT phase were separated and distributed, respectively. And fine grains having relatively small and uniformly distributed grains with sizes ranging from approximately 0.4 to 0.5 μm and pores within the specimens were observed. Notably, variations in the BT content did not significantly affect the grain size or porosity distribution, and a relative density of about 90% or more was shown. The resistivity, temperature coefficient of resistance (TCR), and B25/65-value of the 0.7LSMO-0.3BT specimen at room temperature showed the highest values of 1.94 Ω-cm, 0.292 %/℃, and 464 K, respectively. The resistivity behavior of the LSMO-BT composites matched well with the small polaron hopping conduction model.
  • 18 View
  • 0 Download
Structural and Electrical Properties of La0.7Sr0.3MnO3 Thin Films for Thermistor Applications
Jeong-Eun Lim, Byeong-Jun Park, Sam-Haeng Yi, Myung-gyu Lee, Joo-Seok Park, Byung-cheul Kim, Young-gon Kim, Sung-gap Lee
J Electr Electron Mater 2022;35(5):499-503.   Published online September 1, 2022
DOI: https://doi.org/10.4313/JKEM.2022.35.5.12
La0.7Sr0.3MnO3 precursor solution were prepared by a sol-gel method. La0.7Sr0.3MnO3 thin films were fabricated by a spin-coating method on a Pt/Ti/SiO2/Si substrate. Structural and electrical properties with the variation of sintering temperature were measured. All specimens exhibited a polycrystalline orthorhombic crystal structure, and the average thickness of the specimens coated 6 times decreased from about 427 nm to 383 nm as the sintering temperature increased from 740℃ to 830℃. Electrical resistance decreased as the sintering temperature increased. In the La0.7Sr0.3MnO3 thin films sintered at 830℃, electrical resistivity, TCR, B-value, and activation energy were 0.0374 mΩㆍcm, 0.316%/℃, 296 K and 0.023 eV, respectively.
  • 7 View
  • 0 Download
Structural and Electrical Properties of (La,Nd,Sr)MnO3 Ceramics for NTC Thermistor Devices
Kyeong-ha Shin, Byeong-jun Park, Jeong-eun Lim, Sam-haeng Lee, Myung-gyu Lee, Joo-seok Park, Sung-gap Lee
J Electr Electron Mater 2022;35(3):292-296.   Published online May 1, 2022
DOI: https://doi.org/10.4313/JKEM.2022.35.3.12
(La0.5Nd0.2Sr0.3)MnO3 specimens were prepared by a solid-state reaction. In all specimens, X-ray diffraction patterns of an orthorhombic structure were shown. The fracture surfaces of (La0.5Nd0.2Sr0.3)MnO3 specimens showed a transgranular fracture pattern be possibly due to La ions (0.122 nm) as a perovskite A-site dopant substituting for Nd ions (0.115 nm) having a small ionic radius. The full-width at half maximum (FWHM) of the Mn 2p XPS spectra showed a value greater than that [8] of the single valence state, which is believed to be due to the overlapping of Mn2+, Mn3+, and Mn4+ ions. The dependence of Mn 2p spectra on the Mn3+/Mn4+ ratio according to sintering time was not observed. Electrical resistivity resulted in the minimum value of 100.7 Ω-cm for the specimen sintered for 9 hours. All specimens show a typical negative temperature coefficient of resistance (NTCR) characteristics. In the 9-hour sintered specimen, TCR, activation energy, and B25/65-value were -1.24%/℃, 0.19 eV, and 2,445 K, respectively.
  • 8 View
  • 0 Download
Analysis of Charge Transfer Mechanism in Molecular Memory Device using Temperature-dependent Electrical Measurement
Kyung Min Choi, Ja Ryong Koo, Young Kwan Kim, Sang Jik Kwon
J Electr Electron Mater 2008;21(7):615-619.   Published online July 1, 2008
  • 10 View
  • 0 Download