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"Hall effect"

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"Hall effect"

Thin Films and Sensors : Effects of Doping Concentration on the Properties of Ga-doped ZnO Thin Films Prepared by RF Magnetron Sputtering
Ki Cheol Park, Hyoung Min Kim, Dae Young Ma
J Korean Inst Electr Electron Mater Eng 2012;25(12):984-989.   Published online December 1, 2012
DOI: https://doi.org/10.4313/JKEM.2012.25.12.984
We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of Ga2O3 powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of Ga2O3 content in the targets. The 3,000 Å thick GZO thin films with the lowest resistivity of 7×10-4 Ω·cm are obtained by using the GZO (Ga2O3= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration (ne) in the film increases.
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Realization of p-type Conduction in Antimony Doped ZnO Thin Films by PLD
Ki Ryeol Bae, Dong Wook Lee, J. Elanchezhiyan, Jae Won Lee, Yun Mi Bae, Byoung Chul Shin, Il Soo Kim, F. K. Shan
J Korean Inst Electr Electron Mater Eng 2009;22(10):814-820.   Published online October 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.10.814
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The Effect of Thermal Annealing and Growth of CdGa2Se4 Single Crystal Thin Film by Hot Wall Epitaxy
Myung Seok Hong, Kwang Joon Hong
J Korean Inst Electr Electron Mater Eng 2007;20(10):829-838.   Published online October 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.10.829
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Effect of Bias Voltage of Influenced on a Property of Electrical and Optical of ZnO:Al
J Korean Inst Electr Electron Mater Eng 2005;18(6):493-498.   Published online June 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.6.493
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A Study of Oxygen Vacancy on SnO2 Thin Films
J Korean Inst Electr Electron Mater Eng 2005;18(2):109-115.   Published online February 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.2.109

Citations

Citations to this article as recorded by  
  • Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films
    Bong Ju Lee, Ho Jun Song, Jin Jeong
    Advances in Materials Science and Engineering.2015; 2015: 1.     CrossRef
  • Effect of the Change of Deposition Time on the Secondary Direction and Abnormal Shape of Grains Growth of SnO2Thin Films
    Jin Jeong
    Advances in Materials Science and Engineering.2015; 2015: 1.     CrossRef
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  • 2 Crossref
The Effect of Thermal Annealing and Growth of CuAlSe2 Single Crystal Thin Film by Hot Wall Epitaxy
Seog Jin Yun, Tae Su Jeong, U Seon Lee, Jin Seong Park, Dong Chan Sin, Gwang Jun Hong, Bong Ju Lee
J Korean Inst Electr Electron Mater Eng 2003;16(10):871-880.   Published online October 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.10.871
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Other : Microstructure and Electrical Properties of SnO2 Thin Films Grown by Thermal CVD Method
Jin Jeong, Seong Pyung Choi, Dong Chan Shin, Jae Bon Koo, Ho Jun Song, Jin Seoung Park
J Korean Inst Electr Electron Mater Eng 2003;16(5):441-447.   Published online May 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.5.441
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