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"Gd"

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"Gd"

Study on Hetero Gate Dielectrics to Reduce Ambipolar Current in Nanosheet Tunneling FETs
A-young Kim, Da-eun Bang, Hyo-jun Park, Tae-hyun Kil, Ju-won Yeon, Moon-kwon Lee, Eui-cheol Yun, Min-woo Kim, Su-jin Jeon, Moon-seok Kim, Jun-young Park
J Korean Inst Electr Electron Mater Eng 2025;38(3):296-301.   Published online May 1, 2025
DOI: https://doi.org/10.4313/JKEM.2025.38.3.9
Aggressive device scaling has severely degraded the switching characteristics of CMOS transistors. This issue has led to the development of tunneling FETs (TFETs) as an alternative. TFETs, with their asymmetric doping of the source and drain regions, offer improved subthreshold swing (SS) compared to conventional MOSFETs. However, despite this advantage, TFETs still suffer from ambipolar current, which increases off-state current (IOFF). This paper introduces an approach to applying hetero gate dielectrics (HGDs) in nanosheet (NS) TFETs to reduce ambipolar current characteristics. The magnitude of the drain electric field is reduced by selectively forming a high-k dielectric near the source region This configuration allows the TFETs to avoid unintended band-to-band tunneling (BTBT) and suppress ambipolar current during the off-state.
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Photoluminescence Properties of Red Phosphors Gd(1-x)VO4Eu(x)3+ Subjected to Eu3+ Concentration
Shin Ho Cho, Seon Woog Cho
J Korean Inst Electr Electron Mater Eng 2012;25(3):193-197.   Published online March 1, 2012
DOI: https://doi.org/10.4313/JKEM.2012.25.3.193
Gd(1-x)VO4:Eu(x)3+ red phosphors were synthesized with changing the concentration of Eu3+ ion by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence and photoluminescence excitation properties of the red phosphors were measured by using X-ray diffractometer, field emission-scanning electron microscopy, and florescence spectrometer, respectively. The XRD results showed that the main peak of all the phosphor powders occurs at (200) plane. As for the photoluminescence properties, the maximum excitation spectrum occurred at 306 nm due to the charge transfer band from VO4(3-) to Eu3+ ions and the maximum emission spectrum was the red luminescence peaking at 619 nm when the concentration of Eu3+ ion was 0.10 mol.
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Fabrication and Characterization of Red Emitting OLEDs using the Alq3:Rubrene-GDI4234 Phosphor System
J Korean Inst Electr Electron Mater Eng 2006;19(5):437-441.   Published online May 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.5.437
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A Study on Electrochemical Properties of Acrylate-based Gel Polymer Electrolyte with Ethylene Oxide Group
Hyun Soo Kim, Jung Han Shin, Seong In Moon, Dae Hee Oh
J Korean Inst Electr Electron Mater Eng 2004;17(6):608-614.   Published online June 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.6.608
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Display,Optical Deyices : Improving Efficiencies of DSC by Down-conversion of LiGdF4:Eu
Hyeon Ju Kim, Jae Seong Song, Sang Su Kim
J Korean Inst Electr Electron Mater Eng 2004;17(3):323-328.   Published online March 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.3.323
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Effect of Gd2O3 and Sm2O3 Addition on the Properties of CeO2
Gwang Hun Choe, Ju Sin Lee, Bong Gi Lyu
J Korean Inst Electr Electron Mater Eng 2003;16(11):979-986.   Published online November 1, 2003
DOI: https://doi.org/10.4313/JKEM.2003.16.11.979

Citations

Citations to this article as recorded by  
  • Enhanced Red Luminescence in Dy3+/Eu3+ Co-doped Calcium Alumino Borosilicate Glasses for w-LED Applications
    Videsh Kumar, Sheetal Kumari, Shristy Malik, Ravita, Tripti Sharma, Aman Prasad, A. S. Rao
    Journal of Fluorescence.2025; 35(8): 7385.     CrossRef
  • Effect of copper addition on lithium zinc borosilicate glass containing terbium oxide
    I. Kashif, Sahar Saad Ali, Nourhan. M. Khodeir, Mariam. A. Elhakiem, A. Ratep
    Journal of Optics.2025; 54(5): 3136.     CrossRef
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Phase Transformation and Misconstruct of REBa2Cu3O7-χ, (RE=Nd, Gd, Dy) Superconductor during Heat treatment
Yong Taeg O, Yong Hui Han, Byeong Seong Han, Sang Cheol Han, Tae Hyeon Seong, Gwang Jun Hong, Dong Chan Sin
J Korean Inst Electr Electron Mater Eng 2003;16(12s):1278-1285.
DOI: https://doi.org/10.4313/JKEM.2003.16.12s.1278
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