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"Gas mixture"

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"Gas mixture"

Regular Paper : Characteristic Analysis and Preparation of Multi-Layer TiNOx Thin Films for Solar-thermal Absorber
Dong Hyun Oh, Sang Uk Han, Hyun Hoo Kim, Gun Eik Jang, Yong Jun Lee
J Korean Inst Electr Electron Mater Eng 2014;27(12):820-824.   Published online December 1, 2014
DOI: https://doi.org/10.4313/JKEM.2014.27.12.820
TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of TiO2/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and (N2+O2) gas mixture. TiO2 of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, thecrystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200∼1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.
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Energy Materials : Properties and Preparation of AlNO Multi-layer Thin Films Using DC Magnetron Sputter Method
Hyun Hoo Kim, Dong Hyun Oh, Chan Soo Baek, Gun Eik Jang, Dong Ho Choi
J Korean Inst Electr Electron Mater Eng 2014;27(9):589-593.   Published online September 1, 2014
DOI: https://doi.org/10.4313/JKEM.2014.27.9.589
AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. Al2O3/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and (N2+O2) gas mixture, and Al2O3 of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at arange of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling(N2+O2) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above98% of absorptance in visible wavelength region.
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Physical Properties of ITO/PVDF as a Function of Oxygen Partial Pressure
Sang Yub Lee, Ji Hwan Kim, Dong Hee Park, Dong Jin Byun, Won Kook Choi
J Korean Inst Electr Electron Mater Eng 2008;21(10):923-929.   Published online October 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.10.923
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