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"Forming"

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"Forming"

The Strength of Sintered Body with the Composition and the Forming Process of LTCC Materials
Sin Il Gu, Dong Hun Yeo, Sahn Nahm, Hyo Soon Shin
J Electr Electron Mater 2013;26(1):27-32.   Published online January 1, 2013
According to the composition of LTCC material, though it was thought that bulk defect which was made in forming process effects on the densification during the sintering, it was not reported systemically. In this study, we evaluated crystal structure, 3 point bending strength, hardness and microstructure of the samples by uniaxial pressing and tape casting using the commercial powders of the crystallizing glass and the glass/ceramic composite. In the case of glass/ceramic composite, Viox-001 powder with residual glass in the sintering, 3 point bending strength was similar regardless of forming process due to fill the bulk defect by residual glass. In the case of crystallizing glass, MLS-22, because glass phase was small in the sintering, glass did not fill the pore in the sample by uniaxial pressing process, therefore, the 3 point bending strength of it was 167 MPa. However, the 3 point bending strength of the sample by tape casting was 352 MPa and much higher. Meanwhile, crystal structure and hardness were similar regardless of forming process.
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Semiconduclor : Perfect Interference Alignment for K-user MIMO X Network
Seong Ho Park, Ki Hong Park, Myeong Jin Kim, Young Chai Ko
J Electr Electron Mater 2011;24(2):95-101.   Published online February 1, 2011
In wireless X networks where all transmitters send the independent messages to all receivers, the theoretical bound on the degrees of freedom (DOF) and interference alignment (IA) scheme for its achievability are given by Cadambe and Jafar [1]. However, IA scheme for wireless X network may be infeasible in practice unless the transmitters have the perfect channel information. In addition, if the transmitter with single antenna uses time-varying channel coefficients as a beamforming vector, the infinite channel extension is required to achieve the theoretical bound on the DOF of wireless X networks with perfect IA scheme. In this paper, we consider K-user MIMO X network where K transmitters and K receivers have M antennas each. While the beamforming vectors have been constructed with multiple channel uses over multiple time slot in the earlier work, we consider the beamforming vectors constructed only by a spatial signature over unit time. Accordingly the channel information at the transmitters can be available instantaneously. Then we propose the perfect IA scheme with no channel extension. Based on our sum-rate analysis and the simulation results, we confirm that our proposed scheme can achieve MK/2 DOF which is quite close to the theoretical bound on the DOF region of wireless X networks.
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Semiconduclor : Adaptive Multiuser MIMO Transmission in Wireless Systems with Cooperating Cells
Jin Hee Lee, Young Chai Koo
J Electr Electron Mater 2011;24(2):102-107.   Published online February 1, 2011
In multicell wireless systems with insufficient frequency reuse, user transmission will suffer other-cell interference (OCI). Cell cooperation is an effective way to mitigate OCI and increase the system sum rate. An adaptive scheme for serving one user in each cell was proposed in [1]. In this paper, we generalize that scheme by serving two users in each cell with adaptive zeroforcing beamforming (ZF) strategies. Based on our derived statistics of the signal-to-noise plus interference ratios, we choose the scheme to maximize the total ergodic sum-rate based on user locations. Through the numerical examples, we show that the total system sum rate can be improved by selecting appropriate transmitting strategy adaptively. As a result, our proposed system can explore spatial multiplexing gain without additional power and thus improves total system sum rate significantly.
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Fabrication and Characterizations of Nickel Metal Mask with Fine Pitch by Additive Process
J Electr Electron Mater 2007;20(11):925-931.   Published online November 1, 2007
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Studies for Improvement in SiO2, Film Property for Thin Film Transistor
Chang Ki Seo, Myung Suk Shim, Jun Sin Yi
J Electr Electron Mater 2004;17(6):580-585.   Published online June 1, 2004
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