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"Energy band gap"

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"Energy band gap"

Effects of Oxygen on the Properties of Mg-doped Zinc Tin Oxide Films Prepared by rf Magnetron Sputtering
Ki Cheol Park, The Young Ma
J Korean Inst Electr Electron Mater Eng 2013;26(5):373-379.   Published online May 1, 2013
DOI: https://doi.org/10.4313/JKEM.2013.26.5.373
Mg doped zinc tin oxide (ZTOMg) thin films were prepared on glasses by rf magnetron sputtering. O was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate trdnsparent thin film transistors were fabricated on N Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.

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  • A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature
    Young Ho So, Jung Ho Song, Dong Myung Seo, Teresa Oh
    Industry Promotion Research.2016; 1(1): 1.     CrossRef
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Optical Properties of α-In2S3:Co2+ Single Crystal
Kwang Ho Park, Seung Cheol Hyun, Jin Jeong, Seok Kyun Oh
J Korean Inst Electr Electron Mater Eng 2008;21(12):1057-1062.   Published online December 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.12.1057
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