(Ga203)x(ZnO)100-x, (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the Ga203 content. The GZO film with an atomic ratio of Ga203 of x 7 wt. %, shows the lowest resistivity of 7.5 X 10-4 cm. The GZO films were also prepared at various substrate temperatures from room temperature to 300t, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of 2.8x 10u1 n that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of 300t by using the FTS.

IGZO thin films have been prepared by RF magnetron sputtering. The structural, electrical and optical properties of the IGZO thin films have been investigated as a function of deposition condition. XRD analysis of IGZO thin films showed a typical crystallographic orientation with c-axis perpendicular regardless of deposition conditions. The carrier mobility, carrier concentration and resistivity of the IGZO films sputtered at 200 W, 1mTorr and 300℃ were 28.5 cm2/V·sec, 2.6×1020 cm3, 8.8×10-4 Ω·cm respectively. The optical transmittance were higher than 80% at visible region regardless of the deposition conditions under the experiments above, and specifically higher than 90% at wave length over 500 nm. The absorption edge was shifted to shorter wavelength with increase of carrier concentration.