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"Electric characteristics"

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"Electric characteristics"

Preparation of ITO Thin Films by FTS(Facing Targets Sputtering) Method
J Korean Inst Electr Electron Mater Eng 2004;17(11):1230-1233.   Published online November 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.11.1230

Citations

Citations to this article as recorded by  
  • Properties of ZrO2 Gas Barrier Film using Facing Target Sputtering System with Low Temperature Deposition Process for Flexible Displays
    Ji Hwan Kim, Do Hyun Cho, Sun Young Sohn, Hwa Min Kim, Jong Jae Kim
    Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(5): 425.     CrossRef
  • Process Characteristics of SiOx and SiOxNy Films on a Gas Barrier Layer using Facing Target Sputtering (FTS) System
    Jin Woon Son, Yong Jin Park, Sun Young Sohn, Hwa Min Kim
    Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(12): 1028.     CrossRef
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The Dielectric Characteristics of Turn-to-Turn Insulation for DC Reactor Type HTSFCL
Seung Myeong Baeg, Jong Man Jeong, Chang Hwa Lee, En Ban Dung Lyu, Sang Hyeon Kim
J Korean Inst Electr Electron Mater Eng 2003;16(12s):1299-1304.
DOI: https://doi.org/10.4313/JKEM.2003.16.12s.1299
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