In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

Ultrasonic wave technologies have been widely used in ultrasonic washing machines, ultrasonic surgery, ultrasonic welding machines, ultrasonic sensors, and medical instruments. Ultrasonic surgery can be realized through the cavitation effect of ultrasonic waves. In this study, piezoelectric ceramics were manufactured to achieve the optimum design of a piezoelectric vibrator in a handheld generator for ultrasonic surgery. The best specimen showed the excellent piezoelectric properties of kp＝0.624, Qm＝1,531, and d₃₃＝356 pC/N. Numerical modeling based on the finite element method was performed to find the resonance frequency, the anti-resonance frequency, and the displacement properties of the handheld ultrasonic generator. Maximum displacement was observed in the six-step piezoelectric vibrator at 6.36 μm.

The white light of a hybrid LED is obtained by using red and green organic fluorescent layers made of polymethylmethacrylate (PMMA) films, which function as color down-conversion layers of blue light-emitting diodes. In this research, we studied the fluorescence properties of a red organic fluorophore, employing perylene bisimide derivatives applicable to hybrid LEDs. The solubility, thermal stability, and luminous efficiency are important characteristics of organic fluorophores for use in hybrid LEDs. The perylene fluorescent compounds (1A and 1B) were prepared by the reaction of 4-bromophenol and 4-iodophenol with N,N`-bis(4-bromo-2,6-diisopropylphenyl)-1, 6,7,12-tetrachloroperylene-3,4,9,10-tetracarboxyl diimide (1) in the presence of dimethyl formaldehyde (DMF) at 70℃. The synthesized derivatives were characterized by using 1H-NMR, FT-IR, UV/Vis absorption and PL spectra, and TGA analysis. Compounds 1A and 1B showed absorption and emission at 570 nm and 604 nm in the UV/Vis spectrum. We also documented favorable solubility and thermal stability characteristics of the perylene fluorophores in our work. Perylene fluorophore 1, with the 4-bromophenol substituent 1A, exhibited particularly good thermal stability and solubility in organic solvents.

The electrocaloric effect in 0.94(Bi_0.5Na_0.5)TiO₃+0.06KNbO3+0.9 wt% G.F.ferroelectricceramics was observed in terms of the temperature change (ΔT) of the fabricated ceramics, Curie temperature Tc, and applied electric field. The specimens were fabricated by a conventional solid-state reaction. T_c appeared near 165∼170℃. The P-E hysteresis showed a tendency to slim down with a temperature increase and finally was slimmest near 150℃. With the increase of temperature, the polarization revealed a gradual decrease, and a sharp decline near T_c. When an electric field of 45 kV/cm was applied, the largest polarization was shown. The maximum value of the temperature change (ΔT=0.31℃) was obtained at 165℃ under an applied electric field of 45 kV/cm.

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect and low sintering temperature, PLZT(8/65/35) ceramics was fabricated using conventional solid-state method with the variation of sintering temperature (1,050℃, 1,100℃, 1,200℃). The XRD pattern of all specimens indicated general perovskite structure with secondary phase. From the results of temperature dependence of dielectric constant, the TC (ferroelectric-paraelectric phase transition temperature) was shifted toward high temperature with increasing sintering temperature. When the specimen was sintered at 1,100℃, the optimal value of .T ∼0.349℃ in ambient temperature of 215℃ was appeared. It is considered that PLZT(8/65/35) ceramics possess the possibility of refrigeration device application.

In this work, in order to develop the ceramics with an excellent electrocaloric effect, [Bi0.5(Na0.84K0.16)0.5]TiO3 ceramics were fabricated by conventional solid state reaction method. The ceramics was observed as rhombohedral phase by X-ray diffraction patterns. To investigate the electrocaloric effect of the ceramics, P-E hysteresis loops were measured at various temperature. The temperature change ΔT of these ceramics was calculated using the Maxwell``s relations. The maximum value of temperature change ΔT was obtained as 0.3 1℃ at 165℃ under applied electric fields 45 kV/cm.