In this study, the properties of C-V degradation for thermal conductivity silicone rubber sample which is attached by copper-copper, copper-aluminum, aluminum-aluminum on upper-side and under-side has been measured at temperature of 80℃∼140℃. The results of this study are as follows. In case the frequency is increased, it found that the electrostatic capacity increased with increasing temperature to 80℃, 110℃, 140℃ regardless of kind of electrode. It found that the electrostatic capacity increased with becoming high temperature range of frequency regardless of kind of electrode. This result is considered to be caused by thermal absorption on the thermal conductivity silicone rubber sample. It found that the electrostatic capacity decreased with increasing temperature and frequency. This result is considered to be caused by molecular motion of C-F radical or OH radical.

In this study, the temperature characteristics of electrostatic capacity and dielectric loss for thesample of Teflon film which is degradated at the 120℃∼200℃ temperature range in the oven for 10 hourshas been measured in through the applied frequency range of 0.1 kHz∼4,800 kHz at temperature of 50℃,90℃, 130℃, 170℃. Also, in the same conditions, the frequency characteristics of electrostatic capacity anddielectric loss for the sample of Teflon film has been measured in through the applied temperature rangeof 30℃∼70℃ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are asfollows. When the frequency range of 0.1 kHz∼4,800 kHz applied to the sample of Teflon film, theelectrostatic capacity has been measured at the temperature of 50℃, 90℃, 130℃, 170℃. Through thismeasurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding thisresult, may be it is because the electromagnetic coupling is degraded by thermal degradation. When thesample of Teflon film heated at 280℃ for 10 hours in oven, the dielectric loss has changed from unstablestatus to stabilizing status with increasing the degradation temperature in the 120℃, 160℃, 200℃ range. Inthis measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum ofdielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Throughthis study, It found that the electrostatic capacity decreased with increasing frequency and temperature,and there is no change in dielectric loss, although the frequency increases.