Silicon nitride thin film deposited with Plasma Enhanced Chemical Vapor Deposition was treated by a nitrogen plasma generated by Inductively Coupled Plasma at room temperature. The treatment was investigated by Fourier Transform Infrared Spectroscopy and Atomic Force Microscopy on the surface at various RF source powers at two RF bias powers. The amount of hydrogen was reduced and the surface roughness of the films was decreased remarkably after the plasma treatment. In order to understand the causes, we analyzed the plasma diagnostics by Optical Emission Spectroscopy and Double Langmuir Probe. Based on these analysis results, we show that the nitrogen plasma treatment was effective in the improving of the properties silicon nitride thin film for flexible display.

In this study, the surface modification of copper foil using an inductively coupled O2 / Ar plasma as O2 gas fraction (0∼100%) was investigated in order to improve the surface characteristics. After plasma treatment, the measurement of the surface roughness, surface contact angle and surface energy were performed for the surface analysis of copper foil. As a result, the surface roughness and the surface energy were increased. And plasma diagnostics was performed by a double Langmuir probe (DLP) and optical emission spectroscopy (OES). Using these results, the plasma surface modification mechanism was investigated.

The cause of the thickness non-uniformity in the large area deposition of SiO2 films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the SiO2 films, it was conformed that the non-uniform deposition of SiO2 films was related with the spatial distribution of the oxygen radical density and electron temperature.

Citations

• P‐11: Effects of Ar Dilution on N2O/SiH4 PECVD for the Growth of Silicon Oxide Thin Films with Improved Breakdown Voltage Characteristics
  Aram Kim, Bokyoung Lee, Hyeona Kim, Jungho Bang, Seung Hee Nam, Kwon-Shik Park, Jeomjae Kim, Soo Young Yoon
  SID Symposium Digest of Technical Papers.2022; 53(1): 1078.     CrossRef
• In - situ diagnostics of PECVD AlO x deposition by optical emission spectroscopy
  Kyung Kim, Saul Winderbaum, Ziv Hameiri
  Surface and Coatings Technology.2017; 328: 204.     CrossRef