As packing density in integrated circuits increases, multilevel metallization process has beenwidely used. But hillock formed in the bottom layers of aluminum are well known to make interlayershort in multilevel metallization. In this study, the effects of ion implantation to the metal film anddeposition temperature on the hillock formation were investigated. The Al-1%Si thin film of 1 ㎛thickness was DC sputtered with substrate (SiO2/Si) temperature of 20℃, 200℃, and 400℃, respectively. Ar ions (1×1015 cm-2: 150 keV) and B ions (1×1015 cm-2, 30 keV, 150 keV) were implanted to the Al-Sithin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal depositiontemperature below than 200℃, and B implanting to an Al-Si film is effective to reduce hillock density inthe high temperature deposition conditions around 400℃. Line width less than 3 ㎛ was free of hillockafter alloying.