We investigated the potential of IO:H thin films and hydrogen doping to improve current density and fill factor for enhancing the performance of silicon heterojunction solar cells. We revealed that a transmittance of 86.7% and work function of 5.4 eV could be achieved by injecting 3 sccm of hydrogen gas. The lattice constant of 1.037 nm at the AB site indicates an anion antibonding tendency, and the work function increases as the Fermi level shifts to the valence band. Based on these findings, we fabricated a silicon heterojunction solar cell and achieved an efficiency of 18.53%, while computer simulation confirmed a conversion efficiency of 24.65%, an open-circuit voltage of 724 mV, and a fill factor of 82.72% at a current density of 41.15 mA/㎠.

The purpose of this paper is to help those who research and develop solar cells in university laboratories and industrial sites understand the most basic and important quantum efficiency measurement and analysis method in analyzing solar cell performance. Starting with the definition of quantum efficiency, we calculate the theoretical current density according to the band gap of the solar cell material from the solar spectrum, along with a detailed introduction to the measurement and analysis methods, and measure and analyze the theoretical current density and quantum efficiency. We discuss in depth how to analyze the performance of solar cells through Quantum efficiency measurement and analysis of solar cells is a very useful method that can give intuition to solar cell performance analysis as it can analyze solar cells according to depth (front emitter, bulk, rear surface). Students and researchers who study solar cells with a deep understanding of theoretical current density and quantum efficiency measurement analysis are expected to use it as a basis for analyzing solar cell performance.

Cs3Sb photocathode was formed by newly developed process and successive in-situ lightingdevices were fabricated in a process chamber. R, G, and B phosphors were applied on the anode plate,respectively. Major parameters such as brightness, power consumption, and efficacy were measured. Thewavelength of LED excitation source was 450 nm. Both high power and low power modes were appliedin the measurement. Measurement values were clearly differentiated by the voltage application modes. The measured values of each parameter was good enough to be applied for general lighting source. Theresults showed that Cs3Sb photocathode formed in atmospheric conditions was functioning as good as thephotocathode formed in UHV conditions, and thus it could be applied to advanced lighting devices.

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was 3.1×1010n/cm2. The current density after irradiation decreased from 12.7 to 0.75 A/cm2. Also, a slight positive shift (ΔVth= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (ΔΦB= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

The Sr based ceramic thin films were deposited on Si substrate by RF magnetron sputtering method. And Sr based thin films were annealed at 500～700℃ using RTA. The surface roughness showed about 2.4 nm in annealed thin film at 600℃. The capacitance density of Sr based thin films were increased with the increase of annealing temperature. The maximum capacitance density of 0.6 ㎌/㎠ was obtained by annealing temperature at 700℃. The voltage dependence of dielectric loss showed about 0.02 in voltage ranges of -10～＋10 V. The leakage current density of annealing temperature of 600℃ was the 4.0×10-6 A/㎠ at applied voltage of -5～＋5 V.

The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV∼6 kV to measure the conduction current for the analysis of ion current.