ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of 10(-4) Ωcm is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to 500℃. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was 2.44≠10(-3) Ωcm and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

ZnO with the wide band gap near 3.37 eV is typically an n-type semiconductor in which deviation from stoichiometry is electrically active. It was known that the films with a resistivity of the order of 10-4 Ωcm is not easy to obtain. In order to improve electrical characteristic of ZnO, we added 1, 3, 5 wt% Ga element in ZnO. The Ga-doped ZnO (GZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to 500℃. X-ray diffraction (XRD) patterns of GZO films showed preferable crystal orientation of (002) plane. The lowest resistivity of the GZO films was 8.9×10-4 Ωcm. GZO films significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.