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"Charge recombination"

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"Charge recombination"

Impact of Solution-Processed BCP Buffer Layer on Efficient Perovskite Solar Cells
Minsu Jung, In Woo Choi, Dong Suk Kim
J Electr Electron Mater 2021;34(1):73-77.   Published online January 1, 2021
DOI: https://doi.org/10.4313/JKEM.2021.34.1.13
Inorganic-organic hybrid perovskite solar cells have demonstrated considerable improvements, reaching 25.5% of certified power conversion efficiency in 2020 from 3.8% in 2009. In normal structured perovskite solar cells, TiO2 electrontransporting materials require heat treatment process at a high temperature over 450℃ to induce crystallinity. Inverted perovskite solar cells have also been studied to exclude the additional thermal process by using [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as a non-oxide electron-transporting layer. However, the drawback of the PCBM layer is a charge accumulation at the interface between PCBM and a metal electrode. The impact of bathocuproin (BCP) buffer layer on photovoltaic performance has been investigated herein to solve the problem of PCBM. 2-mM BCP-modified perovskite solar cells were observed to exhibit a maximum efficiency of 12.03% compared with BCP-free counterparts (5.82%) due to the suppression of the charge accumulation at the PCBM-Au interface and the resulting reduction of the charge recombination between perovskite and the PCBM layer.
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Light-Emission Characteristics of Organic Light-Emitting Diodes Driven by Alternating Current
Ow-tae Kwon, Tae-wan Kim
J Electr Electron Mater 2016;29(10):625-629.   Published online October 1, 2016
Electrical and optical properties of the AC voltage driven organic light-emitting diodes were investigated by measuring the electroluminescence of the device. Device structure of ITO(170 nm)/TPD(40 nm)/Alq3(60 nm)/LiF(0.5 nm)/Al(100 nm) was manufactured using a thermal evaporation. Sinusoidal and square-type AC voltage was applied to the device using a function generator. Amplitude of the applied voltage was 9.0 V, and a frequency was varied from 50 Hz to 50 kHz. Electroluminescence out of the device was measured in a Si photodetector simultaneously with the applied voltage together. An intensity and a delayed residual luminescence from the device were depended on the frequency of the sinusoidal voltage. It is thought to be due to a contribution of the capacitive nature in the equivalent circuit of the device. An electron mobility was estimated using a time constant obtained from the luminescence of the device driven by the square-type AC voltage.
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