Cadmium compounds with one dimension (1D) nanostructures have attracted attention for their excellent electrical and optical properties. In this study, vertically aligned CdTe-Si nanostructures with high density were synthesized by several simple chemical reactions. First, l D Te nanostructures were synthesized by silver assisted chemical Si wafer etching followed by a galvanic displacement reaction of the etched Si nanowires. Nanowire length was controlled from 1 to 25 μm by adjusting etching time. The Si nanowire galvanic displacement reaction in HTeO₂ + electrolyte created hybrid 1D Te-branched Si nanostructures. The sequential topochemical reaction resulted in Ag₂Te-Si nanostructures, and the cation exchange reaction with the hybrid 1D Te-branched Si nanostructures resulted in CdTe-Si nanostructures. Wet chemical processes including metal assisted etching, galvanic displacement, topochemical and cation exchange reactions are proposed as simple routes to fabricate large scale, vertically aligned CdTe-Si hybrid nanostructures with high density.

The composites composed of conducting polymer (MEH-PPV), CdTe nanoparticles, and multiwalled carbon nanotubes (MWNTs) were spectroscopically and electrically characterized in their thin films. The composite films were prepared by spray coating. These composites were prepared from the mixture solution of MEH-PPV and CdTe-embedded MWNTs, in which CdTe nanoparticles were electrostatically bound to MWNTs. UV/vis and PL spectra were analyzed to investigate the optical absorbance and emission of the composite films. In addition, their structural, electrochemical, and electrical properties were studied by transmission electron microscopy, cyclic voltammetry, and I-V measurement.