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"CdSe films"

The Structural and Electrical Properties of CdSe Films Deposited at Low Temperature
Ki Cheol Park, Tae Young Ma
J Korean Inst Electr Electron Mater Eng 2010;23(10):776-781.   Published online October 1, 2010
DOI: https://doi.org/10.4313/JKEM.2010.23.10.776
CdSe films were deposited on glass substrates (CdSe/glass) by thermal evaporation. Substrate temperature was lowered by cooling substrate holder with liquid nitrogen. Substrate temperatures were 200℃, 0℃ and -40℃. The crystallographic properties and surface morphologies of the CdSe/glass films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical and electrical properties of the films were investigated by dependence of energy gap, photosensitivity and resistivity on the substrate temperature. CdSe/glass showed energy gap of ~1.72 eV regardless of substrate temperature. The resistivity of the films decreased to 0.5 Ωcm by lowering the substrate temperature to -40℃. The CdSe/glass films prepared at 0℃ showed the highest photosensitivity among the films in this study.
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