Titanium oxide (TiO2) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of TiO2 films synthesized at various ALD cycle numbers were investigated. The synthesized TiO2 films exhibited higher contact angle and smooth surface. The contact angle of TiO2 films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on TiO2 film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of TiO2 films for self-cleaning critically depended on a number of ALD-cycle.