Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Page Path

5
results for

"Anti-reflection coating"

Keywords

Publication year

Authors

"Anti-reflection coating"

Anti-Reflection Thin Film For Photoelectric Conversion Efficiency Enhanced of Dye-Sensitized Solar Cells
Haeng-yun Jung, Hyun-chul Ki, Kyung-jin Hong
J Electr Electron Mater 2016;29(12):814-818.   Published online December 1, 2016
DSSCs (dye-sensitized solar cells) based on TiO2/SiO2 multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.
  • 6 View
  • 0 Download
Energy Materials : Double Layer Anti-reflection Coating for Crystalline Si Solar Cell
Je Jun Park, Myeong Sang Jeong, Jin Kuk Kim, Hi Deok Lee, Min Gu Kang
J Electr Electron Mater 2013;26(1):73-79.   Published online January 1, 2013
Crystalline silicon solar cells with SiNx/SiNx and SiNx/SiOx double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of SiNx and SiOx layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9∼2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of 1,370 ㎛. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300∼1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with SiNx single layer. With the completed solar cell with SiNx/SiNx of n= 2.2/1.9 and SiNx/SiOx of n= 2.2/1.46, the electrical characteristics was improved as ΔVoc= 3.7 mV, ΔJsc= 0.11 mA/cm2 and Δ Voc= 5.2 mV, ΔJsc= 0.23 mA/cm2, respectively. It led to the efficiency improvement as 0.1% and 0.23%.
  • 8 View
  • 0 Download
Optical and Mechanical Properties of Diamond-Like Carbon Film with Variation of Carbon Ratio
Deok Yong Yun, Yong Seob Park, Won Seok Choi, Byung You Hong
J Electr Electron Mater 2008;21(9):808-811.   Published online September 1, 2008
  • 6 View
  • 0 Download
The Increase of Photodiode Efficiency by using Transparent Conductive Aluminium-doped Zinc Oxide Thin Film
Yun Hwan Jeong, Hu Jie Jin, Choon Bae Park
J Electr Electron Mater 2008;21(9):863-867.   Published online September 1, 2008
  • 7 View
  • 0 Download
Design and Characteristics of Anti-reflection Coating using Multi-Layer Thin Film on the Ferrule Facet
J Electr Electron Mater 2007;20(11):991-994.   Published online November 1, 2007
  • 8 View
  • 0 Download