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"Anti-reflection coating"

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"Anti-reflection coating"

Anti-Reflection Thin Film For Photoelectric Conversion Efficiency Enhanced of Dye-Sensitized Solar Cells
Haeng-yun Jung, Hyun-chul Ki, Kyung-jin Hong
J Korean Inst Electr Electron Mater Eng 2016;29(12):814-818.   Published online December 1, 2016
DOI: https://doi.org/10.4313/JKEM.2016.29.12.814
DSSCs (dye-sensitized solar cells) based on TiO2/SiO2 multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.
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Energy Materials : Double Layer Anti-reflection Coating for Crystalline Si Solar Cell
Je Jun Park, Myeong Sang Jeong, Jin Kuk Kim, Hi Deok Lee, Min Gu Kang
J Korean Inst Electr Electron Mater Eng 2013;26(1):73-79.   Published online January 1, 2013
DOI: https://doi.org/10.4313/JKEM.2013.26.1.73
Crystalline silicon solar cells with SiNx/SiNx and SiNx/SiOx double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of SiNx and SiOx layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9∼2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of 1,370 ㎛. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300∼1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with SiNx single layer. With the completed solar cell with SiNx/SiNx of n= 2.2/1.9 and SiNx/SiOx of n= 2.2/1.46, the electrical characteristics was improved as ΔVoc= 3.7 mV, ΔJsc= 0.11 mA/cm2 and Δ Voc= 5.2 mV, ΔJsc= 0.23 mA/cm2, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

Citations

Citations to this article as recorded by  
  • Understanding UVID in AlOx-passivated TOPCon solar cells: a hydrogen-mediated device physics framework unifying multistage degradation and recovery
    Zongtao Liu, Ruy Sebastian Bonilla, Zhiwei Li, Ning Yang, Kai Yu, Xinya Niu, Pietro P. Altermatt, Ruijiang Hong, Zongcun Liang
    EES Solar.2026;[Epub]     CrossRef
  • Comparing the Optical Characteristics of Dielectric Mirrors Fabricated by PECVD from Different Precursors: Monosilane and Tetraethoxysilane
    I. M. Asharchuk, M. V. Shibalov, A. M. Mumlyakov, P. A. Nekludova, G. D. Diudbin, N. V. Minaev, A. A. Pavlov, M. A. Tarkhov
    Nanobiotechnology Reports.2023; 18(S1): S63.     CrossRef
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The Increase of Photodiode Efficiency by using Transparent Conductive Aluminium-doped Zinc Oxide Thin Film
Yun Hwan Jeong, Hu Jie Jin, Choon Bae Park
J Korean Inst Electr Electron Mater Eng 2008;21(9):863-867.   Published online September 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.9.863
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Optical and Mechanical Properties of Diamond-Like Carbon Film with Variation of Carbon Ratio
Deok Yong Yun, Yong Seob Park, Won Seok Choi, Byung You Hong
J Korean Inst Electr Electron Mater Eng 2008;21(9):808-811.   Published online September 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.9.808
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Design and Characteristics of Anti-reflection Coating using Multi-Layer Thin Film on the Ferrule Facet
J Korean Inst Electr Electron Mater Eng 2007;20(11):991-994.   Published online November 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.11.991
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