In this study, we performed the deposition of Al thin film using a DC magnetron sputtering method. To evaluate electrical and structural properties, the growth conditions were changed in terms of two functions, namely, sputtering power ranging from 41.6 to 216 W and film growth rate ranging from 5.35 to 26.39 nm/min. The growth rate and the microstructure were characterized by a scanning electron microscopy and X-ray diffraction analysis. The plane of crystalline growth showed that the preferential (111) direction and defects due to the grain boundary increased with DC power. The resistivity of the Al film over 50 nm showed a constant value by horizontal grain growth. Our results can be applicable for the preparation of nano-templates for anodic aluminum oxide.

Anodic aluminum oxides (AAO) fabricated by the two-step anodizing process have attracted much attention for the fabrication of nano template because of pore structure with high aspect ratio, low cost process and ease of fabrication. AAOs are characterized by a homogeneous morphology of parallelpores that grow perpendicular to the template surface with a narrow distribution of diameter, length and inter-pores spacing, all of which can be easily controlled by suitably choosing of the anodizingparameters such as pH of the electrolyte, anodizing voltage and duration of anodizing. In this study, AAOtemplates were characterized by X-ray diffraction and field-emission scanning electron microscope(FE-SEM). The dependence of the pore size change according to the amount of addition of phosphoric acid, which was used to remove the initial alumina oxide layer, was not observed.

In this study, we fabricated anodic aluminum oxide (AAO) membrane by two step anodizing process for pH detection. The structural properties were observed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). Electrochemical measurements of the pH sensor have been performed in capacitance-voltage (C-V) and drift rates. The characterization of AAO membrane exhibited high sensitivity (99.1 mV/pH) at second anodizing time of 4 min.이 논문에 참고문헌이 0건 있습니다.