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"AlTiO"

Study on Reflectance Improvement of Al-Ti Based Oxide Thin Films for Semitransparent Solar Cell Applications
Eun Kyu Lee, So Un Jeong, Ki Su Bang, Seung-yun Lee
J Korean Inst Electr Electron Mater Eng 2018;31(7):437-442.   Published online November 1, 2018
DOI: https://doi.org/10.4313/JKEM.2018.31.7.437
This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a TiO2/Al2O3 bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick TiO2 thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in TiO2 film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the TiO2 film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.
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