Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ-H2O-TMA-H2O). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at 100℃, so that the Al-doped film of 5 at% shows the lowest resistivity (1.057×10(-2) Ω·cm) and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at 250℃ demonstrates the superior resistivity (1.237×10(-4) Ω·cm).

Citations

• Review Article: Atomic layer deposition of doped ZnO films
  Zhengning Gao, Parag Banerjee
  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films.2019;[Epub]     CrossRef
• Experimental Study on Fabrication of AZO Transparent Electrode for Organic Solar Cell Using Selective Low-Temperature Atomic Layer Deposition
  Ki-Cheol Kim, Gen-Soo Song, Hyung-Tae Kim, Kyung-Hoon Yoo, Jeong-Jin Kang, Jun-Young Hwang, Sang-Ho Lee, Kyung-Tae Kang, Heui-Seok Kang, Young-June Cho
  Transactions of the Korean Society of Mechanical Engineers B.2013; 37(6): 577.     CrossRef