In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zincoxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy band gap were changed by the thickness of silver layer. To fabricate metal oxide metal(OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to 6.0×10-3Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO,OMO show the peak [002] direction at 34°. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

In order to prevent heat loss that occurs through the glass, low-emissivity (Low-E) coating methods with good insulating properties and high transmittance were used. lnGaZnO/Ag/InGaZnO (IGZO/Ag/IGZO) multilaver thin films have been deposited on XG glass substrate by HF magnetron sputtering. Depending on the different thickness of Ag in multilayer films, the structural and optical properties of Low-E multilayer films were analyzed. By XRI) analysis results, the multilayer thin films were observed to be amorphous structure regardless of Ag thickness. According to the AFM results, surface morphology of the multilayer films was observed and compared. Using UV-VIS spectroscopy, low emissivity propertty has been observed clearly with the transmittance of higher than 85% at visible range and lower than 30 at ll range.